The Polishing Effect of SiC Substrates in Femtosecond Laser Irradiation Assisted Chemical Mechanical Polishing (CMP)

Wang, Chengwu; Kurokawa, Syuhei; Doi, Toshiro; Yuan, Ju Long; Sano, Yasuhisa; Aida, Hideo; Zhang, Kehua; Deng, Qian Fa

doi:10.1149/2.0041704jss

Cited by 40 publications

(16 citation statements)

References 25 publications

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“…Pre-processing of 4H-SiC wafers includes chemical softening and activation (e.g., thermal oxidation and laser irradiation) before CMP. [46][47][48][49][50][51][52][53][54][55] With the pre-processing thermal oxidation at the temperature of 1100 °C for 10 h the formation rate of the oxide layer at the surface of a 4H-SiC wafer reaches 29 nm h −1 . [48] The laser irradiation method refers to the irradiation of a 4H-SiC wafer by an ultra-fast laser, including femtosecond laser, nanosecond laser, and picosecond laser.…”

Section: Pre-processingmentioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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Section: Pre-processingmentioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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“…On the basis of single-laser polishing technology, researchers have carried out research on the composite polishing technology of laser and other energy fields. Wang et al [ 23 ] used femtosecond laser-assisted chemical mechanical polishing of SiC crystals, and the corresponding composite polishing mechanism was explored. It was found that the surface quality and polishing efficiency of chemical mechanical polishing SiC crystals could be significantly improved when the laser process parameters were properly selected.…”

Section: Introductionmentioning

confidence: 99%

Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

Zhang

Chen

et al. 2022

Micromachines

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SiC ceramics have excellent comprehensive properties and are typical hard and brittle materials that are difficult to process and are widely used in many fields. Laser polishing technology has developed into a new surface processing technology, and femtosecond laser polishing has become an important method for the precision machining of hard and brittle materials. In this paper, SiC ceramics were ablated and polished by infrared femtosecond laser, the laser ablation threshold of SiC ceramics was calculated and the influence of pulse energy and defocus amount on the surface morphology, surface roughness, polishing depth and oxidation degree of femtosecond laser polishing of SiC ceramics were investigated. The results show that when the laser repetition frequency f = 175 kHz, wavelength λ = 1064 nm and ablation time t = 9 s, the laser ablation threshold of SiC ceramics is 0.355 J/cm2. With the increase in pulse energy, the surface roughness first decreased and then increased, and the polishing depth showed an overall upward trend. The change of defocus amount will lead to the change of the laser spot diameter. With the increase of the defocus amount, the laser spot irradiated on the workpiece surface becomes larger, and the laser energy density decreases, which results in the decrease of the laser ablation ability and polishing depth and the increase of the polished surface roughness. Periodic nano-ripple structures appeared on the laser-induced surface. Through Energy Dispersive Spectrometer (EDS) elemental analysis, it was found that there was an oxidation phenomenon in SiC ceramics polished by femtosecond laser in an air environment, and the change of pulse energy and defocus amount had insignificant effects on the degree of oxidation.

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“…However, most researchers take laser as an energy source or preprocessing for assisting chemical mechanical polishing (CMP). [29][30][31] Although the CMP method has good precision, its high requirement, low efficiency, and inconvenience limit its application for CMC polishing. In consequence, ultrafast laser direct polishing method of CMC has not yet studied in the literature.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond laser polishing of SiC/SiC composites: Effect of incident angle on surface topography and oxidation

Yan

Lin

Guo-ji

et al. 2020

Journal of Composite Materials

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In this article, a new ultrafast laser polishing method for SiC/SiC composites was reported and the effects of different incident angles were discussed in detail. The results indicated that the incident angle had a great influence on the polishing of SiC/SiC composites. Under the normal incident condition, the surface roughness was barely improved and the laser-induced defects even degraded the process quality. With the increasing incident angle, surface oxidation and defects dramatically decreased. At 80 degrees, the surface convex structure is almost eliminated and the protruding fiber was neatly cut off. Furthermore, a theoretical model of laser polishing for SiC/SiC composites is used to analyze the laser propagation and power density distribution in different incident angles. The model successfully predicted the laser energy resonance enhancement and illustrated the formation mechanism of laser-induced defects and nanoripples. Meanwhile, the result shows that the laser energy concentrated on the convex fiber of composites as the incident angle increased, which explained that the SiC/SiC composites polishing quality was significantly improved under the inclined incident condition.

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The Polishing Effect of SiC Substrates in Femtosecond Laser Irradiation Assisted Chemical Mechanical Polishing (CMP)

Cited by 40 publications

References 25 publications

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Influence of Pulse Energy and Defocus Amount on the Mechanism and Surface Characteristics of Femtosecond Laser Polishing of SiC Ceramics

Femtosecond laser polishing of SiC/SiC composites: Effect of incident angle on surface topography and oxidation

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