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2015
DOI: 10.1016/j.solmat.2015.06.055
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The Passivated Emitter and Rear Cell (PERC): From conception to mass production

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Cited by 365 publications
(194 citation statements)
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References 35 publications
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“…Since the Toledo modules were manufactured, Si PV module efficiencies have increased considerably through the use of a rear passivation layer with localised contacts. This passivated emitter and rear cell (PERC) design, which was first reported by Blakers et al, is now being manufactured in increasing volumes in China . The reduced recombination current density in these cells makes them more sensitive to impurities in the Si such as B‐O defects and metal impurities.…”
Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning
confidence: 99%
“…Since the Toledo modules were manufactured, Si PV module efficiencies have increased considerably through the use of a rear passivation layer with localised contacts. This passivated emitter and rear cell (PERC) design, which was first reported by Blakers et al, is now being manufactured in increasing volumes in China . The reduced recombination current density in these cells makes them more sensitive to impurities in the Si such as B‐O defects and metal impurities.…”
Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning
confidence: 99%
“…The authors wish to make the following changes to their paper [1]. Figure1 is replaced by a new one, which has the same meaning as previous one, but different style.…”
Section: D-pc Configurationmentioning
confidence: 99%
“…Although the current PV market is dominated by crystalline silicon (c-Si) solar cells because of their high efficiency and steadily decreasing manufacturing cost [1,2], thin-film silicon solar cells (TFSC) including hydrogenated amorphous silicon (a-Si:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (µc-Si:H) are still promising candidates for special applications. For example, flexible a-Si:H-based solar cells can be used for military applications, clothing-integrated photovoltaics for portable electronic devices, irregularly-shaped building surfaces, and so on [3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…The device is composed of a textured Si wafer with doped layers/regions on both sides of the wafer. PERC-type cSi cells are created either by diffused or ion-implanted impurity doping [40], followed by dielectric passivation-layer deposition, and capping of the rear dielectric by full-area metallization. Both front and electrical rear contacts are locally adhered to the silicon wafer underneath.…”
Section: Modelling Approachmentioning
confidence: 99%