2017
DOI: 10.1109/jphotov.2017.2663658
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Optical Evaluation of the Rear Contacts of Crystalline Silicon Solar Cells by Coupled Electromagnetic and Statistical Ray-Optics Modeling

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Cited by 6 publications
(3 citation statements)
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“…Similarly, the thickness of LNO was selected to encapsulate the spatial extent of the leaked high- Q mode, while minimizing the distance between the electrostatic contacts. Our electrostatic contacts consist of two 50 nm layers of transparent conducting oxide (TCO), here modeled as indium tin oxide (ITO), on top of the Si and beneath the LNO . Maintaining a minimal distance between the electrical contacts raises the resulting electrostatic field intensity experienced by the nanobar.…”
mentioning
confidence: 99%
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“…Similarly, the thickness of LNO was selected to encapsulate the spatial extent of the leaked high- Q mode, while minimizing the distance between the electrostatic contacts. Our electrostatic contacts consist of two 50 nm layers of transparent conducting oxide (TCO), here modeled as indium tin oxide (ITO), on top of the Si and beneath the LNO . Maintaining a minimal distance between the electrical contacts raises the resulting electrostatic field intensity experienced by the nanobar.…”
mentioning
confidence: 99%
“…Our electrostatic contacts consist of two 50 nm layers of transparent conducting oxide (TCO), here modeled as indium tin oxide (ITO), on top of the Si and beneath the LNO. 25 Maintaining a minimal distance between the electrical contacts raises the resulting electrostatic field intensity experienced by the nanobar. The ITO top contact is the same width as the Si to electrically tune each nanobar individually, while the bottom contact is continuous and acts as the ground.…”
mentioning
confidence: 99%
“…Our electrostatic contacts consist of two 50 nm layers of transparent conducting oxide (TCO), here modeled as indium tin oxide (ITO), on top of the Si and beneath the LNO. 25 Maintaining minimal distance between the electrical contacts raises the resulting electrostatic field intensity experienced by the nanoantenna. The ITO top contact is etched the same width as the Si, while the bottom contact is unetched and acts as the ground.…”
mentioning
confidence: 99%