The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

Campbell, Jason P.; Qin, Jin; Cheungl, K.P.; Yu, Libing; Suehlel, J. S.; Oates, A. S.; Sheng, Kuang

doi:10.1109/irws.2008.4796097

Cited by 17 publications

(25 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In recent years, random telegraph noise (RTN) has attracted researchers' attention. RTN can cause random fluctuations in electrical parameters (such as V th and I d ) [1]. RTN-induced I d variation can be up to 40% in 30×30nm devices [2], and the V th variation can be larger than 70mV for the smallest devices at 22nm technology node [3].…”

Section: Introductionmentioning

confidence: 99%

“…The physical mechanism of RTN has been studied for many years [1], [6]- [8]. The impact of single trap induced RTN on memories was widely studied [4], [9]- [15], some circuitlevel simulation approaches were also proposed [16]- [19].…”

Section: Introductionmentioning

confidence: 99%

“…As shown in Fig. 1a, RTN is caused by the capture/emission process of charge carriers by the oxide traps (defects) [1], [8]. A carrier in the channel is occasionally captured by a trap in the oxide, and the carrier will be emitted back after a period of time.…”

Section: Introductionmentioning

confidence: 99%

“…The time spent in the high V th state is emission time τ e , which means "time to be emitted back", and the time spent in the low V th state is capture time τ c , which means "time to be captured". τ e and τ c strongly depend on gate overdrive (τ c = 10 −3 s to 10 −2 s and τ e = 10 −1 s to 10 +1 s [1]). …”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Statistical analysis of random telegraph noise in digital circuits

Chen

Wang

Cao

et al. 2014

2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)

View full text Add to dashboard Cite

Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm technology node. Existing RTN simulation approaches mainly focus on single trap induced RTN and transient response of RTN, which are usually time-consuming for circuit-level simulation. This paper proposes a statistical algorithm to study multiple traps induced RTN in digital circuits, to show the temporal distribution of circuit delay under RTN. Based on the simulation results we show how to protect circuit from RTN. Bias dependence of RTN is also discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Statistical analysis of random telegraph noise in digital circuits

Chen

Wang

Cao

et al. 2014

2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)

View full text Add to dashboard Cite

show abstract

“…As a result, it is important to investigate electronic noise in semiconductor devices. Electronic noise is due to random events that take place inside electrical devices and the theoretical interpretation of these stochastic events is very important in order to accurately match a noise model to the observed results in experimental studies [1].In this paper we present a deterministic approach to compute the spatial origin of current noise spectral density in semiconductor devices. The numerical solution of it is based on the spherical harmonics expansion (SHE) of the Boltzmann Transport Equation (BTE) in the frequency domain with special initial [2] and boundary conditions [3].…”

mentioning

confidence: 99%

A deterministic approach to the spatial origin of semiconductor device current noise for semiclassical transport

Noaman

Korman

2009

2009 International Semiconductor Device Research Symposium

View full text Add to dashboard Cite

Performance of an electronic system can be greatly limited by its internal noise and can be employed as a measure to characterize the effectiveness of such systems. As a result, it is important to investigate electronic noise in semiconductor devices. Electronic noise is due to random events that take place inside electrical devices and the theoretical interpretation of these stochastic events is very important in order to accurately match a noise model to the observed results in experimental studies [1].In this paper we present a deterministic approach to compute the spatial origin of current noise spectral density in semiconductor devices. The numerical solution of it is based on the spherical harmonics expansion (SHE) of the Boltzmann Transport Equation (BTE) in the frequency domain with special initial [2] and boundary conditions [3]. The salient feature of this model is that: (i) it utilizes the SHE that is a well established technique to solve the BTE, (ii) it combines analytical and numerical methods, in contrast with the Monte Carlo approach that employs ensemble averages of randomly generated events [5,6], (iii) the model formally relies on the solution of a time-dependent transient solution of the BTE with special initial and boundary condition that is solved in the frequency domain to directly compute the terminal current noise spectral density, and (iv) the terminal current noise is directly related to particle scattering inside the device, which is accounted for in the BTE, without the need to add Langevin noise terms to the calculations [7].For the calculation of current noise in our model, two quantities that are solutions of BTE are required: one is the steady state distribution function, which will be used as initial condition for the second quantity, and the other one is an effective distribution function in the frequency domain.Simulation results are presented for the terminal current spectral density and the spatial noise across a 1-D n + nn + structure due to phonon scattering. The spherical harmonics method up to the first order is used to solve the BTE, which for the 1-D case reduces to the Legendre Polynomial method. The effect of non-parabolic band structure, as well as acoustic and inelastic intervalley phonon scattering is considered in this simulation, and the electric field is in the [111] direction. A 0.6 μm long 1-D silicon n + nn + structure biased at 0.0, 0.5 and 1.0 Volt has been simulated. Fig. 1 shows the average results of the simulation: (a) carrier density; (b) electric potential; (c) electric field; and (d) average velocity respectively across the device. Fig. 2 (a) shows the current terminal spectral density at zero bias. It shows the well-known behavior of the current noise spectral density. The current noise spectrum is flat below 100 GHz, and it exhibits a resonant peak at the plasma frequency [8]. Fig. 2 (b) shows a spatial origin of the current noise at 1 GHz. The simulations show a symmetry of the local noise contribution at zero bias, which is intuitive since the ge...

show abstract

Application of Resistive Random Access Memory in Hardware Security: A Review

Rajendran

Banerjee

Chattopadhyay

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

today, with the low power embedded devices deployed for sensing, actuating and running intelligent decision-making algorithms. The advancement in wireless communication technologies such as WiFi, Bluetooth low energy, 4G-LTE, LoRaWAN and recently 5G millimeter wave communication coupled with huge boost in the computing capabilities enable these devices to exchange and process data both at the edge and cloud. This intelligent environment is now widely explored as the Internet of Things (IoT). One of the primary concerns in this development is to security. Most of the available protocols and encryption techniques for device authentication and data transfer are purely software measures, thus presenting an opportunity for a determined attacker to bypass those with higher computing power or uncover the secrets through information leakages in physical forms. Furthermore, software-driven security demands high system resources, which is unavailable in resource-constrained IoT devices, therefore necessitating robust hardware security solutions that can be integrated into those devices. On the other hand, globalization of the semiconductor industry supply chain mandates a careful auditing and trust management during the fabrication and system integration process, which can very well benefit from the inherent randomness in the manufacturing processes. Hence, hardware security research today predominantly focuses on designing security primitives that tap onto the manufacturing variations, thereby constructing primitives like true random number generator (TRNG), physical unclonable function (PUF), and cryptographic hash functions.The emerging nonvolatile memory (NVM) devices such as resistive random access memory (RRAM), spin-transfer torque magnetic random-access memory (STT-MRAM), spin-orbit torque magnetic random-access memory (SOT-MRAM), and ferroelectric field-effect transistors (FeFET) are currently explored for building beyond Von Neumann architectures. Among them, RRAM is well established today. It is a two-terminal device commonly known for its metal-insulator-metal structure. This device technology's strength is the available wide range of functional materials that can be engineered for reliable resistive switching. It includes binary transition metal oxides, 2D materials likeNowadays, advancements in the design of trusted system environments are relying on security provided by hardware-based primitives, while replacing resource-hungry software security measures. Emerging nonvolatile memory devices are promising candidates to provide the required hardware security functionalities at very low area-energy-runtime budget. Resistive random access memory (RRAM) offers high-density integration with outstanding performance among the state-of-the-art nonvolatile memory devices. The RRAM device technology is currently getting significant attention from both academia and industry for constructing beyond Von Neumann architectures. This technology's strength is its scalable two-terminal structure, the availability of wide range...

show abstract

The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

Cited by 17 publications

References 20 publications

Statistical analysis of random telegraph noise in digital circuits

Statistical analysis of random telegraph noise in digital circuits

A deterministic approach to the spatial origin of semiconductor device current noise for semiclassical transport

Application of Resistive Random Access Memory in Hardware Security: A Review

Contact Info

Product

Resources

About