The modification of Schottky barrier height of Au/p-Si Schottky devices by perylene-diimide

Abstract

Perylene-diimide (PDI) thin film was fabricated by spin coating method on p-Si single-crystal substrate to prepare Au/PDI/p-Si Schottky device. The electrical properties of the Au/PDI/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the temperature range 80–300 K and room temperature capacitance-voltage (C–V) measurement. Results showed a rectification behavior. Junction parameters such as ideality factor (n), barrier height (ϕB0), series resistance (Rs) interface state density (Nss), built-in potential (Vbi), carrier concentration (NA), and the width of the depletion layer (WD) were obtained from the I–V and C–V measurements. The values of ideality factor (n) and barrier height (BH) for the Au/PDI/p-Si structure from the I–V measurements were obtained as 1.77 and 0.584 eV at 300 K, 7.78 and 0.176 eV at 80 K, respectively. It was seen that the BH value of 0.584 eV calculated for the Au/PDI/p-Si structure was significantly larger than the value of 0.34 eV of conventional Au/p-Si Schottky diodes at room temperature. Thus, modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin interlayer of the peryleen-diimide organic semiconductor; this has been ascribed to the fact that the peryleen-diimide interlayer increases the effective barrier height because of the interface dipole induced by passivation of the organic layer. Furthermore, the energy distribution of the interface state density determined from I–V characteristics increases exponentially with bias from 1.11 × 1012 eV−1 cm−2 at (0.556−Ev) eV to 11.01 × 1013 eV−1 cm−2 at (0.449−Ev) eV.

Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes

“…This value is quite higher than 0.34 of conventional Au/p-Si Schottky diodes [35] and higher than 0.58 of Au/Perylene-diimide/p-Si [39], 0.41 of Au/strontium titanate/p-Si [40] and 0.68 of Au/Poly(4-vinyl phenol)/p-Si MIS structures [41] reported in literature. On the other hand, this value is also higher than metal/DLC/pSi Schottky diodes obtained by Gupta et al [28].…”

Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes

“…It was found that the value of the leakage current density for the Pc layer inserted devices varies between 2.29 × 10 −7 A/cm 2 and 6.56 × 10 −7 A/cm 2 , while the observed leakage current density was 1.38 × 10 −4 A/cm 2 for Ag/p-Si structure. It should be mentioned here that the observed level of leakage current density is significantly low when compared with the reported values with similar structure such as Au/PDI/p-Si [23] and Al/DNA/p-Si [24] Schottky devices. This findings clearly show that the main performance parameters of a SBD such as rectification ratio and leakage current can be improved by modifying p-type silicon surface with 2(3),9(10), 16(17) Various models, such as Fowler-Nordheim tunneling, Poole-Frenkel emission, and Ohmic and space charge limited (SCL) current, have widely been used to understand the nature of the charge transport through an organic thin film [25][26][27].…”

Composition analysis of two different PEDOT:PSS commercial products used as an interface layer in Au/n-Si Schottky diode

“…T is the absolute temperature, A* ¼ 4pqm*k 2 h 3 is Richardson's constant and the value is 120 A cm À2 K À2 for n-type Si. 22 The ideality factor and barrier height of the Schottky barrier diodes are describe the deviation of the experimental temperature dependent I-V data is expressed as: 23,24 Fig. 4 shows the semi-logarithmic forward and reverse bias I-V characteristics of the Au/PH1000/n-Si and Au/HTL Solar/n-Si SBDs in the temperature ranging from 290 K to 380 K. From intercept and slope of ln I vs. V plot at each temperature gives the f b0 and n respectively.…”