The metal-semiconductor transition in amorphous Si<sub>1-x</sub>Cr<sub>x</sub>films-scaling behaviour and minimum metallic conductivity

Möbius, A.; Elefant, D.; Heinrich, A.; Müller, R.; Schumann, J.; Vinzelberg, H.; Zies, G.

doi:10.1088/0022-3719/16/33/020

Cited by 38 publications

(50 citation statements)

References 12 publications

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“…The question arises why a minimum metallic conductivity was found in a-Si 1−x Ni x , and previously in a-Si 1−x Cr x [29][30][31][32][33], but not in many of the other substances, e.g. crystalline Si:P, investigated so far.…”

Section: Discussionmentioning

confidence: 99%

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

et al. 1999

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We study the metal-insulator transition in two sets of amorphous Si 1−x Ni x films. The sets were prepared by different, electron-beam-evaporation-based technologies: evaporation of the alloy, and gradient deposition from separate Ni and Si crucibles. The characterization included electron and scanning tunneling microscopy, glow discharge optical emission spectroscopy, energy dispersive X-ray analysis, and Rutherford back scattering. Investigating the logarithmic temperature derivative of the conductivity, w = d ln σ/d ln T , we observe that, for insulating samples, w(T ) shows a minimum, increasing at both low and high T . Both the minimum value of w and the corresponding temperature seem to tend to zero as the transition is approached. The analysis of this feature of w(T, x) leads to the conclusion that the transition in Si 1−x Ni x is very likely discontinuous at zero temperature in agreement with Mott's original views. 71.30.+h,71.23.Cq, Typeset using REVT E X

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Section: Discussionmentioning

confidence: 99%

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

et al. 1999

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“…The data are for amorphous alloys Si 1-x Cr x prepared and reported by Mobius et al in reference [13]. In FIGURES 1 and 2 we have plotted Ln ( ) versus T -0.25 and T -0.5 for various chromium content in the alloy, respectively.…”

Section: Resultsmentioning

confidence: 89%

Hopping conduction in amorphous silicon-chromium films at very low temperature

Errai¹,

kaaouachi²,

Idrissi³

et al. 2014

AIP Conference Proceedings

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“…Amorphous Si 1−x Cr x prepared by electronbeam evaporation was studied in [48][49][50][51][52]. Fig.…”

Section: Experimental Results On W(t X)mentioning

confidence: 99%

“…This subject has been investigated so intensively that it is impossible to give here a complete survey of all related studies of structure and transport properties of amorphous alloys in the vicinity of the MIT. Thus the following selection, listed according to the alloys investigated, contains merely the more important publications on low-temperature transport and, in some cases, structure: Ge-Al [27], Ge-Au [28][29][30], Ge-Co [31], Ge-Cu [32], Ge-Cr [31,[33][34][35], GeFe [31,[36][37][38][39][40], Ge-Mn [31], Ge-Mo [40,41], Ge-Ni [31], Si-Au [42][43][44][45][46][47], Si-Cr [35,[48][49][50][51][52][53][54][55][56][57], Si-Fe [38,58,59], Si-Gd [60,61], Si-Mn [58,[62][63][64], Si-Nb …”

Section: Introductionmentioning

confidence: 99%

Metal–insulator transition in amorphous alloys

Möbius

Adkins

2000

Physica B: Condensed Matter

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We focus on the central problem of discriminating between metallic and insulating behaviour in amorphous alloys formed between a semiconductor and a metal. For this, the logarithmic temperature derivative of the conductivity, w = d ln σ/d ln T , has proved over recent years to be very helpful in determining the critical value x c of the metal content x for the metal-insulator transition (MIT). We show that, for various amorphous alloys, recent experimental results on w(T, x) are qualitatively inconsistent with the usual assumptions of continuity of the MIT at T = 0 and of σ(T, x c ) being proportional to a power of T . These results suggest that w(T, x c ) tends to 0 as T → 0, in which case the MIT should be discontinuous at T = 0 (but only there), in agreement with Mott's hypothesis of a finite minimum metallic conductivity. 71.30.+h,71.23.Cq, Typeset using REVT E X 1 Abbreviations EDX: energy dispersive X-ray analysis MIT: metal-insulator transition MOSFET: metal oxide semiconductor field effect transistor RBS: Rutherford backscattering analysis

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The metal-semiconductor transition in amorphous Si_1-xCr_xfilms-scaling behaviour and minimum metallic conductivity

Cited by 38 publications

References 12 publications

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

Hopping conduction in amorphous silicon-chromium films at very low temperature

Metal–insulator transition in amorphous alloys

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The metal-semiconductor transition in amorphous Si1-xCrxfilms-scaling behaviour and minimum metallic conductivity

Cited by 38 publications

References 12 publications

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

Hopping conduction in amorphous silicon-chromium films at very low temperature

Metal–insulator transition in amorphous alloys

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The metal-semiconductor transition in amorphous Si_1-xCr_xfilms-scaling behaviour and minimum metallic conductivity