Equilibrium Thermodynamics gives a comprehensive but concise course in the fundamentals of classical thermodynamics. Although the subject is essentially classical in nature, illustrative material is drawn widely from modern physics and free use is made of microscopic ideas to illuminate it. The overriding objective in writing the book was to achieve a clear exposition: to give an account of the subject that it both stimulating and easy to learn from. Classical thermodynamics has such wide application that it can be taught in many ways. The terms of reference for Equilibrium Thermodynamics are primarily those of the undergraduate physicist; but it is also suitable for courses in chemistry, engineering, materials science etc. The subject is usually taught in the first or second year of an undergraduate course, but the book takes the student to degree standard (and beyond). Prerequisites are elementary or school-level thermal physics.
We present a detailed analysis of the electrical and optical properties of amorphous transparent conducting thin films of indium oxide prepared by ion beam sputtering with a wide range of carrier concentrations. We show that the resistivity is dominated by ionised impurity scattering despite the amorphous structure of the films. The weak effect of the structural disorder is confirmed by studies of the interband absorption and is explained by a consideration of the relative length scales of the structural disorder and the Fermi wavelength.
The author sets out the model for conduction in disordered systems by variable-range tunnelling in a Coulomb gap. Detailed analysis of experimental data for three different types of granular metal shows that the model cannot apply to these systems. He concludes that the problem of the mechanism of conduction in granular metals remains unsolved.
We study the metal-insulator transition in two sets of amorphous Si 1−x Ni x films. The sets were prepared by different, electron-beam-evaporation-based technologies: evaporation of the alloy, and gradient deposition from separate Ni and Si crucibles. The characterization included electron and scanning tunneling microscopy, glow discharge optical emission spectroscopy, energy dispersive X-ray analysis, and Rutherford back scattering. Investigating the logarithmic temperature derivative of the conductivity, w = d ln σ/d ln T , we observe that, for insulating samples, w(T ) shows a minimum, increasing at both low and high T . Both the minimum value of w and the corresponding temperature seem to tend to zero as the transition is approached. The analysis of this feature of w(T, x) leads to the conclusion that the transition in Si 1−x Ni x is very likely discontinuous at zero temperature in agreement with Mott's original views. 71.30.+h,71.23.Cq, Typeset using REVT E X
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