We focus on the central problem of discriminating between metallic and insulating behaviour in amorphous alloys formed between a semiconductor and a metal. For this, the logarithmic temperature derivative of the conductivity, w = d ln σ/d ln T , has proved over recent years to be very helpful in determining the critical value x c of the metal content x for the metal-insulator transition (MIT). We show that, for various amorphous alloys, recent experimental results on w(T, x) are qualitatively inconsistent with the usual assumptions of continuity of the MIT at T = 0 and of σ(T, x c ) being proportional to a power of T . These results suggest that w(T, x c ) tends to 0 as T → 0, in which case the MIT should be discontinuous at T = 0 (but only there), in agreement with Mott's hypothesis of a finite minimum metallic conductivity. 71.30.+h,71.23.Cq, Typeset using REVT E X 1 Abbreviations EDX: energy dispersive X-ray analysis MIT: metal-insulator transition MOSFET: metal oxide semiconductor field effect transistor RBS: Rutherford backscattering analysis