Hopping conduction in amorphous silicon-chromium films at very low temperature

Errai, M.; kaaouachi, A. El; Idrissi, Hassan El; Zatni, A.; Narjis, A.; Dlimi, S.; Sybous, A.; Limouny, L.; Daoudi, E.

doi:10.1063/1.4860638

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…The Metal-Insulator Transition (MIT) is one of the most interesting problems in modern condensed matter physics [7,9,18,22,[29][30][31]37]. Remarkable progress has been made in the field of MIT, which improves our understanding of electrical transport mechanisms in semiconductors such as crystalline and amorphous semiconductors at low temperatures [1,6,8,10], semiconductor alloys [24] and granular films [3,14,33].…”

Section: Introductionmentioning

confidence: 99%

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Errai

Amrane

Liang

2020

Jour. Atom. Mol. Conden. Matt. Nano Physics

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In this article, we focus on the scaling theory of Abraham et al. without and with a magnetic field on the metallic side of the Metal-Insulator Transition (MIT) for the three-dimensional system 70 Ge: Ga, at very low temperatures. In particular, we have determined the zero temperature conductivity critical exponent when the MIT transition occurs with the variation of the impurity concentration (υ = 0.503) and with the application of a magnetic field (υ = 1.06). We have also estimated the critical magnetic field B C that separates the metallic behavior (B < B C ) from the variable-range hopping regime (B > B C ). The data are for a 70 Ge: Ga sample prepared and reported by Itoh et al.,

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Section: Introductionmentioning

confidence: 99%

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Errai

Amrane

Liang

2020

Jour. Atom. Mol. Conden. Matt. Nano Physics

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Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

Errai

kaaouachi

Idrissi

et al. 2017

Chinese Journal of Physics

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Variable range hopping conduction in n-CdSe samples at very low temperature

2015

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Variable range hopping (VRH) conduction in the insulating three-dimensional n-CdSe samples has been studied over the entire temperature range from 0.03 to 1 K. In the absence of a magnetic field, the low temperature conductivity of the three samples (A, B and C) obeys the Mott VRH conduction with an appropriate temperature dependence in the prefactor ( D 0 exp OE .T 0 =T / p with p 0:25/. This behavior can be explained by a VRH model where the transport occurs by hopping between localized states in the vicinity of the Fermi level, E F , without creation of the Coulomb gap (CG). On the contrary, no Efros-Shklovskii VRH is observed, suggesting that the density is constant in the vicinity of the E F .

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Hopping conduction in amorphous silicon-chromium films at very low temperature

Cited by 4 publications

References 13 publications

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

Variable range hopping conduction in n-CdSe samples at very low temperature

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