Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

Errai, M.; kaaouachi, A. El; Idrissi, Hassan El; Chakhmane, Asmae

doi:10.1016/j.cjph.2017.09.013

Cited by 3 publications

(1 citation statement)

References 24 publications

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“…We have also estimated the critical magnetic field that marks the boundary between the metallic phase and the insulating phase. Moreover, we note that the application of the magnetic field causes the sample to return to the insulating phase [11,17].…”

Section: Discussionmentioning

confidence: 85%

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Errai

Amrane

Liang

2020

Jour. Atom. Mol. Conden. Matt. Nano Physics

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In this article, we focus on the scaling theory of Abraham et al. without and with a magnetic field on the metallic side of the Metal-Insulator Transition (MIT) for the three-dimensional system 70 Ge: Ga, at very low temperatures. In particular, we have determined the zero temperature conductivity critical exponent when the MIT transition occurs with the variation of the impurity concentration (υ = 0.503) and with the application of a magnetic field (υ = 1.06). We have also estimated the critical magnetic field B C that separates the metallic behavior (B < B C ) from the variable-range hopping regime (B > B C ). The data are for a 70 Ge: Ga sample prepared and reported by Itoh et al.,

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Section: Discussionmentioning

confidence: 85%

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Errai

Amrane

Liang

2020

Jour. Atom. Mol. Conden. Matt. Nano Physics

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Behaviour of the conductivity in metallic ⁷⁰ Ge:Ga close to the metal-insulator transition

Errai

Amrane

2021

E3S Web Conf.

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The electrical transport properties in sample 1 of impurity concentration n=xx of the 70Ge: Ga system are studied in the absence of a magnetic field and at low temperature in the range 0.53 to 0.017 K. It is noted that the electrical conductivity of sample 1 exhibits a metallic behavior. We found that the exponent S is equal to 0.5 (σ=σ(T=0)+mTs). This result is in agreement with the theory of weak localization (WL) at 3D and the theory of electronelectron interactions (EEI). We also found that sample 1 is located near the metal-insulator transition (MIT) of the metallic side.

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Continuous Metal-Insulator Transition and Scale Laws in Metallic n-Type InP

Ennajih,

Mabchour,

El kaaouachi

et al. 2023

A. J. P.

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We have studied the transport properties in metallic n-type InP semiconductor. We show that the dependence on temperature of metallic electrical conductivity obey to the law 𝜎 = 𝜎(𝑇 = 0) + 𝑚𝑇1/2. We highlight the absence of a minimum electrical conductivity 𝜎𝑚𝑖𝑛 proposed by Mott at the metal-insulator transition. We show that the conductivity at temperature T = 0 K, 𝜎(𝑇 = 0) , follows a scaling law as a function of the effective parallel and perpendicular Bohr radii 𝑎∥ and 𝑎⊥.

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Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

Cited by 3 publications

References 24 publications

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Behaviour of the conductivity in metallic ⁷⁰ Ge:Ga close to the metal-insulator transition

Continuous Metal-Insulator Transition and Scale Laws in Metallic n-Type InP

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Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures

Cited by 3 publications

References 24 publications

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Metal-insulator Transition in \({}^{70}\)Ge: Ga Semiconductor by Applying the Scaling Laws

Behaviour of the conductivity in metallic 70 Ge:Ga close to the metal-insulator transition

Continuous Metal-Insulator Transition and Scale Laws in Metallic n-Type InP

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Product

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Behaviour of the conductivity in metallic ⁷⁰ Ge:Ga close to the metal-insulator transition