The kinetics of Ge lateral overgrowth on SiO2

Yako, Motoki; Kawai, Nobufumi; Mizuno, Yuki; Wada, Kazumi

doi:10.1557/adv.2015.38

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…The total thickness of Ge was 1.86 µm in the unpatterned blanket area, and the tensile strain in Ge was as large as 0.17 %. In the patterned regions, a film of Ge was formed after the coalescence of Ge selectively grown from the exposed Si surface, as reported previously (12). As in Fig.…”

Section: Growth Of Ge Reverse-rib Structuresupporting

confidence: 67%

“…In present work, "reverse-rib" structures are proposed for the I th reduction, which can confine the light more efficiently in comparison with the conventional structures. The reverse-rib structures are formed applying an epitaxial lateral overgrowth (ELO) technique with thin SiO 2 masks (12). Towards the local formation of heavily n-type region within a wafer, P diffusion is employed from a phosphosilicate glass (PSG) layer deposited on the Ge by a chemical vapor deposition technique.…”

Section: Introductionmentioning

confidence: 99%

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Low Threshold Light Emission from Reverse-Rib n⁺ Ge Cavity Made by P Diffusion

et al. 2016

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Ge laser is expected as a solution for a key issue in electronic-photonic integrations, CMOS compatible on-chip light source. Two important issues remain in Ge laser technologies; the large threshold current (Ith) and the multiple growth of Ge epi-structures to co-integrate Ge devices such as photodetectors, whose pn junction profiles are much different from the Ge lasers. The reported Ith values are larger than those for III-V lasers by two orders of magnitude, and an in-situ heavily n-type doping in Ge prevents to form various pn structures unless the multiple growth with different doping profiles are performed. To solve these issues, the present paper proposes a "reverse-rib" Ge epi-structure in combination with an ex-situ P diffusion for heavily n-type doping, instead of in-situ doping. P-diffused n+-Ge reverse-rib structures first verify a clear threshold behavior of light emission at a low power of optical pumping.

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Section: Growth Of Ge Reverse-rib Structuresupporting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Low Threshold Light Emission from Reverse-Rib n⁺ Ge Cavity Made by P Diffusion

et al. 2016

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“…Such a reduced thickness probably reflects that the Ge growth in the vertical [001] direction is suppressed on the non-planar surface before the coalescence. 44,50) The subsequent growth up to the thickness of 1000 nm led to a coalescence of the adjacent Ge crystals on the SOI strip. Despite a non-flat surface before the growth, a continuous film of Ge with an approximately flat surface was formed on the SOI strip array with the widths of 0.3 and 0.5 μm.…”

Section: Resultsmentioning

confidence: 99%

Reduced threading dislocation density in a germanium epitaxial film coalesced on an arrayed silicon-on-insulator strip

Amin

Motomura

Hizawa

et al. 2022

Jpn. J. Appl. Phys.

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This paper reports a reduction in the threading dislocation density (TDD) of a Ge epitaxial film on a Si-on-insulator (SOI) wafer in terms of the Si-photonics device application. An array of submicron SOI strips is prepared as a patterned substrate, on which Ge is epitaxially grown by chemical vapor deposition. A continuous Ge film is formed by a coalescence of the adjacent Ge crystals on the arrayed SOI strip, while leaving semicylindrical voids on the exposed surface of the buried SiO2 layer between the strips. The TDD of the coalesced Ge film is reduced to 1.0±0.1×108 cm–2, which is approximately a half of 2.2±0.2×108 cm–2 for a Ge film on an unpatterned SOI. A transmission electron microscope observation reveals that the TDD reduction is derived from a downward bending of the dislocation toward the void. An accumulation of the dislocations at the strip sidewalls also contributes to the TDD reduction.

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