High concentration phosphorus doping in Ge for CMOS-integrated laser applications

Park, Chan-Hyuck; Yako, Motoki; Wada, Kazumi; Ishikawa, Yasuhiko; Ahn, Donghwan

doi:10.1016/j.sse.2019.02.007

Cited by 3 publications

(2 citation statements)

References 25 publications

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“…In an attempt to lower lasing threshold, doping has been proposed as a promising technique [9]. An intrinsic semiconductor can be doped by adding impurities to change its electrical, optical, and structural properties.…”

Section: Introductionmentioning

confidence: 99%

Ex-situ doping of ZnO structures as potential random lasers

Azmi

Pung²,

Kamil

2022

J. Phys.: Conf. Ser.

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Zinc oxide (ZnO) nanorods were formed on a glass substrate using chemical bath deposition (CBD) method for three hours at 96 °C. Doping of aluminum (Al) was realised by dipping into aluminum nitrate solution. XRD spectra shows reduced (002) peak related to the crystallinity of the synthesized ZnO with increasing doping concentrations. Doping with 35 mM exhibited highest Al concentration of 11.78 %. An apparent shift in bandgap energy with increasing doping concentration provides further evidence of doping occurring in the sample. Random lasing was observed at a pumping threshold of 9.0 mW and spectral width of 1.09 nm. Overall results indicate promising potential for random lasing to occur in ZnO nanorods doped under ex-situ doping conditions.

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Section: Introductionmentioning

confidence: 99%

Ex-situ doping of ZnO structures as potential random lasers

Azmi

Pung²,

Kamil

2022

J. Phys.: Conf. Ser.

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“…For instance, rare earth have been used as dopants in chalcogenide glass to achieve lasing [15]. On the other hand, specific doping techniques have been developed to improve nanolasers [16] and to obtain high optical gain for CMOS integrated laser emissions [17]. In some specific cases, doping has also been shown to improve gain and modulation bandwidth, for example in InGaAsP lasers [18].…”

Section: Introductionmentioning

confidence: 99%

Influence of Al doping on random lasing in ZnO nanorods

Fadzliana

Samsuri

Chan

et al. 2020

Optics & Laser Technology

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Random lasing was demonstrated from aluminum doped ZnO nanorods fabricated on ITO coated glass substrates using simple chemical deposition technique. Different Aluminum (Al) doping parameters were explored in an attempt to realize low threshold ZnO random lasers. Results confirm threshold was strongly dependent on doping concentration and suggestive of resonant coupling with Al in lowering the threshold by 2 orders of magnitude when compared to undoped ZnO nanorods. Lowest threshold was obtained from ZnO nanorods doped with 10 mM of aluminum, suggesting best doping concentration for ZnO random lasers formed by nanorod array. Results further indicate possibility of controlling random lasing properties by adjusting the doping concentration.

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