Low Threshold Light Emission from Reverse-Rib n<sup>+</sup> Ge Cavity Made by P Diffusion

Yako, Motoki; Park, Chan-Hyuck; Ahn, Donghwan; Ishikawa, Yasuhiko; Wada, K.

doi:10.1149/07508.0193ecst

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…This improvement in material quality may have contributed to the lower threshold of 8 kW/cm 2 compared to 30 kW/cm 2 in Ref. [42]. The threshold is also in the same order as the theoretical modeling in Ref.…”

Section: ≪ 10supporting

confidence: 52%

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Emerging technologies in Si active photonics

Wang

Liu

2018

J. Semicond.

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Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.

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Section: ≪ 10supporting

confidence: 52%

“…Optically-pumped, band-engineered Ge lasers have also been demonstrated at room temperature by different groups [42,43] . Liu et al demonstrated a device consisting of selectively grown multimode n + Ge waveguides with mirror polished facets based on the same fabrication method as their Ge microdisk gain media [35] .…”

Section: ≪ 10mentioning

confidence: 99%

Emerging technologies in Si active photonics

Wang

Liu

2018

J. Semicond.

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“…In the actual Ge/Si DH laser structures, propagation mode of light in the in-plane direction is more important than the radiation mode observed in the PL measurements. 39) In terms of the reduction of scattering loss, the smoothing of SEG Ge sidewalls induced by wet chemical treatment would be also effective. Further enhancement could be obtained if thermal oxidation is combined, since the Ge layers are mostly surrounded by Ge/GeO 2 with a small NRR velocity.…”

Section: Resultsmentioning

confidence: 99%

Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

Yako

Higashitarumizu

Ishikawa

2019

Jpn. J. Appl. Phys.

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Direct-gap photoluminescence (PL) at the wavelength around 1.55 μm from Ge epitaxial layers on Si is studied toward Ge lasers in Si photonics. Comparing the PL intensities under two different wavelengths of excitation lasers, non-radiative interface recombination velocities are estimated to be as large as 105 cm s−1 at Ge/Si and Ge/air interfaces, whereas that at the Ge/GeO2 interface is estimated to be as small as 103–104 cm s−1, which is required for the threshold current density in Ge lasers as low as 10 kA cm−2. In order to remove the effect of defect-rich Ge/Si hetero-interfaces with a high recombination velocity, a wet chemical treatment in a CH3COOH/HNO3/HF/I2 solution is examined. A preferential etching of Ge at Ge/Si interfaces leads to an enhancement of the PL peak intensity by 83 times. A suppression of non-radiative recombination at the Ge/Si interface should contribute to this enhancement, and such a suppression plays a critical role for Ge lasers.

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“…The ''Reverse-Rib'' waveguide structure proposed here has some advantages in comparison with conventional designs. This structure confines the light modes more efficiently and also the fabrication of these types of designs is also easy [45]. Reverse ridge waveguide design can be fabricated in a crack-free manner.…”

Section: Theory and Numerical Analysismentioning

confidence: 99%

Broadband Supercontinuum Generation Using Dispersion Engineered As₂Se₃-GeAsSe-GeAsS Waveguide at 6 μm

Hitaishi

Ashok

2023

IEEE Access

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This paper reports a theoretical study of supercontinuum generation with a novel dispersion-engineered reverse rib waveguide design using chalcogenide materials such as As 2 Se 3 glass as a core, GeAsSe and GeAsS as cladding. This structure achieves an ultrawide bandwidth supercontinuum spectrum because of its high nonlinear property of core material and the low mode loss. The waveguide operates at 170fs laser sech pulses pumping at 6µm as a central wavelength. The proposed waveguide shows an ultra-wide spectrum of up to 16µm at 10kW peak power and up to 13µm broad spectrum at 5kW peak power. Results of spectral broadening for 2kW peak power are also discussed. The designed waveguide structure should be helpful in supercontinuum sources, bio-molecule sensing, and spectroscopy.

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Low Threshold Light Emission from Reverse-Rib n⁺ Ge Cavity Made by P Diffusion

Cited by 5 publications

References 11 publications

Emerging technologies in Si active photonics

Emerging technologies in Si active photonics

Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

Broadband Supercontinuum Generation Using Dispersion Engineered As₂Se₃-GeAsSe-GeAsS Waveguide at 6 μm

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Low Threshold Light Emission from Reverse-Rib n+ Ge Cavity Made by P Diffusion

Cited by 5 publications

References 11 publications

Emerging technologies in Si active photonics

Emerging technologies in Si active photonics

Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

Broadband Supercontinuum Generation Using Dispersion Engineered As₂Se₃-GeAsSe-GeAsS Waveguide at 6 μm

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Low Threshold Light Emission from Reverse-Rib n⁺ Ge Cavity Made by P Diffusion