The Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulations

Kirner, Simon; Hartig, Manuel; Mazzarella, Luana; Korte, Lars; Frijnts, Tim; Scherg-Kurmes, Harald; Ring, Sven; Stannowski, Bernd; Rech, Bernd; Schlatmann, Rutger

doi:10.1016/j.egypro.2015.07.103

Cited by 41 publications

(23 citation statements)

References 15 publications

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“…These seemingly competing requirements have both implications toward the FF of high-efficiency SHJ devices. However, the FF loss observed for lowly doped TCO-contact films [4], [46], [47] cannot be explained by their higher WF, which instead should mitigate possible detrimental "Schottkycontact" effects [39], [42].…”

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

“…This way, the impact of the TCO quality as contact layer on FF can be assessed, independent of its lateral conductivity properties. For this configuration, experimental results [4], [46], [47] indicate that for high FFs (and high n 100 [4]), sufficiently conductive TCO films are needed to contact the a-Si:H(p) layer. Such high TCO conductivities are needed for low contact resistivities.…”

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

“…Looking into the requirements for efficient band-to-band tunneling, the FF loss observed with insufficiently doped TCOs was recently explained-treating the TCO-contact film as a semiconductor material-with inefficient carrier tunneling through a wider space charge region at the aSi:H(p)/TCO interface [47].…”

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

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Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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Abstract-Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

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Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

Section: A Transport and Recombination At The Hole Contactmentioning

confidence: 99%

See 1 more Smart Citation

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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“…It is also important to note that a computational issue associated with using low doped layers in the ITO(n + )/a-Si:H(p) junction is that the non-local band to band tunneling model being used suffers from convergence issues when the layers are completely depleted. Previous simulation studies conducted by Kanevce et al [44,18] and Kirner et al [52] showed the importance of the tunneling mechanism at the ITO(n + )/a-Si:H(p) junction. Thus, we arrive at the conclusion that; 1) a high workfunction achieved by low doping in the ITO(n + ) layer will lead to reduced tunneling at the ITO(n + )/a-Si:H(p) interface which will result in an increased ρc, and 2) a low workfunction achieved by high doping in the ITO(n + ) layer will lead to increased tunneling current and thus a lower ρc .…”

Section: Variation Of Ito Dopingmentioning

confidence: 98%

Multiscale modeling of silicon heterojunction solar cells

Muralidharan

Bowden

Goodnick

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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“…However, ITO does not come without shortcomings: high performance films require high deposition vacuum (although compatible with the sol-gel method [7], this yields more resistive coatings ∼ 10 3 Ω/sq), ITO also requires high deposition or annealing temperature [8], it is brittle by nature and the limited global supply has begun to drive research into alternative TCFs [1]. Thin films of ITO must be processed carefully and methodically in order to achieve reproducible performance which varies with doping concentration [9], crystal orientation, and surface roughness. Consequently, ITO is a challenging candidate for transparent electrodes in touch screens and flexible electronics.…”

Section: Transparent and Conductive Electrodes By Large-scale Nano-stmentioning

confidence: 99%

Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

Linnet¹,

Walther²,

Wolff³

et al. 2018

Opt. Mater. Express

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The widespread use of transparent conductive films in modern display and solar technologies calls for engineering solutions with tunable light transmission and electrical characteristics. Currently, considerable effort is put into the optimization of indium tin oxide, carbon nanotube-based, metal grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate solution-processed masks for physical vapor-deposited metal electrodes consisting of hexagonally ordered aperture arrays with scalable aperture-size and spacing in an otherwise homogeneous noble metal thin-film that may exhibit better electrical performance than carbon nanotube-based thin-films for equivalent optical transparency. The fabricated electrodes are characterized optically and electrically by measuring transmittance and sheet resistance. The presented methods yield large-scale reproducible results. Experimentally realized thin-films with very low sheet resistance, R sh = 2.01 ± 0.14 Ω/sq, and transmittance, T = 25.7 ± 0.08 %, show good agreement with finite-element method simulations and an analytical model of sheet resistance in thin-films with ordered apertures support the experimental results and also serve to aid the design of highly transparent conductive films. A maximum Haacke number for these 33 nm thin-films, φ H = 10.7 × 10 −3 Ω −1 corresponding to T 80 % and R sh 10 Ω/sq, is extrapolated from the theoretical results. Increased transparency may be realizable using thinner metal films trading off conductivity. Nevertheless, the findings of this article indicate that colloidal lithographic patterned transparent conductive films can serve as vital components in technologies with a demand for transparent electrodes with low sheet resistance.

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The Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulations

Cited by 41 publications

References 15 publications

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Multiscale modeling of silicon heterojunction solar cells

Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

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