2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 2016
DOI: 10.1109/pvsc.2016.7750331
|View full text |Cite
|
Sign up to set email alerts
|

Multiscale modeling of silicon heterojunction solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2017
2017
2017
2017

Publication Types

Select...
2

Relationship

1
1

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 92 publications
0
1
0
Order By: Relevance
“…However, once the carrier is 'hopping' through the localized defect states, the hopping rates are much faster than the midgap recombination rates. A poorly passivated device can be driven out inversion due to interface recombination; which will greatly reduce the surface potential at the heterointerface [90].…”
Section: Effect Of the Optical Phonon Energymentioning
confidence: 99%
“…However, once the carrier is 'hopping' through the localized defect states, the hopping rates are much faster than the midgap recombination rates. A poorly passivated device can be driven out inversion due to interface recombination; which will greatly reduce the surface potential at the heterointerface [90].…”
Section: Effect Of the Optical Phonon Energymentioning
confidence: 99%