The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique

Krajewski, T.; Guziewicz, E.; Godlewski, M.; Wachnicki, Ł.; Kowalik, I.A.; Wójcik-Głodowska, A.; Łukasiewicz, Małgorzata; Kopalko, K.; Osinniy, V.; Guziewicz, M.

doi:10.1016/j.mejo.2008.07.053

Cited by 53 publications

(51 citation statements)

References 6 publications

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“…For example, a post-growth annealing of a ZnO lm (at 180 • C and 250 • C) results in a drop of n up to three orders of magnitude, as already reported in [22]. The rectifying e ect is then observed [23].…”

Section: Resultsmentioning

confidence: 61%

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

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The ZnO-based Schottky diodes revealing a high recti cation ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high recti cation ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The in uence of these approaches on the diode's recti cation ratio together with modeling based on the di erential approach and thermionic emission theory are presented.

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Section: Resultsmentioning

confidence: 61%

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

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“…Importantly, we observed that electron mobility in ZnO films grown by the ALD is relatively weakly dependent on film crystallinity [10,11]. For example, for our polycrystalline ZnO films grown at low temperature on glass substrate electron mobility is between 5 and 150 cm 2 /(V⋅s) at room temperature (RT) [4,10,11]. Moreover, the ALD enables growth of ZnO on polymers, plastic foil, glass indium tin oxide (ITO) (see Fig.…”

Section: Zno For Transparent Electronic Devicesmentioning

confidence: 96%

“…Here use of the ALD method is very crucial. Once growth conditions were optimized ZnO films showing only the band edge emission were obtained by us [4][5][6]. By coating of organic material with such ZnO films devices stable in time were constructed [7,38] (see Fig.…”

Section: Hybrid Zno/organic Materials Structures For Optoelectronic Anmentioning

confidence: 99%

Zinc oxide for electronic, photovoltaic and optoelectronic applications

Godlewski

Guziewicz

Kopalko

et al. 2011

Low Temperature Physics

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We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.

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“…ZnO films were grown from diethylzinc and water vapor as zinc and oxygen precursors, respectively. More detail information about technology of these films has been presented in [5][6][7]. In these works, technological regimes for deposition of the films with good structural properties were determined.…”

Section: Technology Of Zno Films Deposition and Conditions Of Experimmentioning

confidence: 99%

“…), the atomic layer deposition method (ALD) demonstrates several advantages (see, e.g., [5][6][7]). For example, the ALD technology permits the deposition of ZnO films very homogeneous in thickness and with good structural properties on the very big substrates.…”

Section: Introductionmentioning

confidence: 99%

Surface polariton excitation in ZnO films deposited using ALD

Venger¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm -1 for the first time. The frequency "windows" with the obtained excited surface phonon and plasmon-phonon polaritons have been found in the measured infrared reflectance spectra. The dispersion response of high and low frequency branches of the IR spectra have been presented.Keywords: disturbed total internal reflection, surface phonon, plasmon-phonon polariton, conductive ZnO film.

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The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique

Cited by 53 publications

References 6 publications

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

Zinc oxide for electronic, photovoltaic and optoelectronic applications

Surface polariton excitation in ZnO films deposited using ALD

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