The Influence of Fluorine Desorption from ECR-CVD SiOF Film

Usami, T.; Ishikawa, Hiraku; Gomi, H.

doi:10.1557/proc-476-69

Cited by 4 publications

(1 citation statement)

References 2 publications

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“…With respect to lowering the dielectric constant, many materials have been examined such as fluorinated SiO 2 , fluorinated amorphous carbon ͑a-C:F,H͒, spin-on organic films, spin-on glasses, parylenes, organo-silane/H 2 O 2 chemical vapor deposition ͑CVD͒, liquid-deposited glasses, xerogels, aerogels, and phase-separated materials. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] A few of these materials are already being used in manufacturing, but they tend to provide small improvements in . The more advanced materials ͑Ͻ3.5͒, are not yet in volume production.…”

Section: Introductionmentioning

confidence: 99%

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Theil

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The need to substitute SiO2 with low dielectric constant (κ) materials increases with each complementary metal–oxide–semiconductor process generation as interconnect RC delay, crosstalk, and power dissipation play an ever larger role in high-performance integrated circuits. Fluorinated amorphous carbon films (a-C:F,H) with low-κ properties (κ∼2.0–2.4) deposited by plasma-assisted chemical vapor deposition (CVD) techniques provide several advantages including low temperature processing, good gap fill capabilities, minimal moisture absorption, and simple implementation. Several deposition techniques have been examined, including high-density plasma and parallel-plate plasma-assisted CVD. In each case, it is possible to deposit a-C:F,H films with widely varying properties, such as κ and thermal stability. This has led to a good deal of confusion as to what is required to produce useful material. Results from many different sources are examined to develop a coherent picture of the relationships between deposition techniques, microstructural features, and macroscopic properties, and to summarize the scientific and technical challenges that remain for a-C:F,H implementation. The relationships between film deposition parameters such as applied substrate bias and film properties are presented in the discussion. In addition, x-ray photoelectron spectroscopy and network constraint theory are used to develop connections between microstructural and macroscopic properties, as well as to show how deposition parameters can be used to create a predictive model. This will demonstrate what process parameters are important in film formation. Finally, efforts to incorporate this material into integrated circuits, as well as measurements of the reliability and performance will be reviewed.

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Section: Introductionmentioning

confidence: 99%

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Theil

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Optimization of post N/sub 2/ treatment & USG cap layer to improve tungsten peeling defects for deep sub-micron device yield improvement

Cheng

Wang

et al.

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

et al. 1999

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The technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

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The Influence of Fluorine Desorption from ECR-CVD SiOF Film

Abstract: The influence of fluorine desorption from SiOF films deposited by biased ECR-CVD was studied. It was found that desorbed F atoms from the SiOF film react with Ti suicide film resulting in forming SiF4 gas. The evolution of SiF4 gas caused the peel-off of the films.

Cited by 4 publications

References 2 publications

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Optimization of post N/sub 2/ treatment & USG cap layer to improve tungsten peeling defects for deep sub-micron device yield improvement

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

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