The influence of fluorine desorption from SiOF films deposited by biased ECR-CVD was studied. It was found that desorbed F atoms from the SiOF film react with Ti suicide film resulting in forming SiF4 gas. The evolution of SiF4 gas caused the peel-off of the films.
In recent ultra large-scale integration (ULSI), Cu wiring and low-k dielectrics are used to reduce resistive capacitive (RC) delay in interconnects. Cu diffusion barrier layers, such as SiC and SiCN, have relatively high k-values, thus they decrease effective k-values (keff) of dielectrics. For this issue, we propose a new amorphous hydrocarbon film (a-CHx) as a Cu barrier dielectric deposited using a microwave-excited plasma reactor with a showerhead. Low ion bombardments and optimum deposition gases gave an excellent film, which achieved low leakage current and thermal resistance simultaneously. This film showed Cu diffusion barrier ability at 350 °C and a lifetime of more than 10 years lifetime at 0.2 MV/cm, which is sufficient for next-generation interlayer dielectric films.
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