The formation of silicides from thin films of some rare-earth metals

Baglin, J. E. E.; d’Heurle, F. M.; Petersson, C. S.

doi:10.1063/1.91559

Cited by 151 publications

(28 citation statements)

References 17 publications

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“…A previous study indicated that the formation of many RE silicides is nucleation controlled. 15 Discrete epitaxial silicide islands were previously found to form in the Dy/(111)Si at the amorphous interlayer/Si interface. 16 It is conceived that discrete islands of epitaxial RESi 2-x are first formed; as the epitaxial RESi 2-x regions grow to impinge on each other, stacking faults are formed.…”

Section: Stacking Faults In (111)si Samplesmentioning

confidence: 98%

Planar defects and double-domain epitaxy in epitaxial YSi2−x and ErSi2−x thin films on Si substrates

Tsai

Chi

Chen

2003

Journal of Elec Materi

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Interfacial reactions of Y and Er thin films on both (111)Si and (001)Si have been studied by transmission electron microscopy (TEM). Epitaxial rare-earth (RE) silicide films were grown on (111)Si. Planar defects, identified to be stacking faults on {1010} planes with 1/6<1213> displacement vectors, were formed as a result of the coalescence of epitaxial silicide islands. Double-domain epitaxy was found to form in RE silicides on (001)Si samples resulting from a large lattice mismatch along one direction and symmetry conditions at the silicide/(001)Si interfaces. The orientation relationships are [0001]RESi 2-x // [110]Si, (1100)RESi 2-x //(001)Si and [0001]RESi 2-x /[110]Si, (1100)RESi 2-x //(001) Si. The density of staking faults in (111) samples and the domain size in (001) samples were found to decrease and increase with annealing temperature, respectively.

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Section: Stacking Faults In (111)si Samplesmentioning

confidence: 98%

Planar defects and double-domain epitaxy in epitaxial YSi2−x and ErSi2−x thin films on Si substrates

Tsai

Chi

Chen

2003

Journal of Elec Materi

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“…This is essentially related to the nucleation controlled nature of RE silicide growth. In binary RE-Si diffusion couples RE silicides form at relatively low temperatures of 325-400 ○ C [28,29], comparable to Ni silicide formation temperatures. However, in the interlayer the RE is also in contact with Ni and the binary metal NiEr is the first phaseto form .…”

Section: B Re Silicide Growthmentioning

confidence: 99%

In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

Demeulemeester¹,

Knaepen²,

Smeets³

et al. 2012

Journal of Applied Physics

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We report on the solid-phase reaction of thin Ni-rare earth films on a Si(100) substrate, for a variety of rare earth (RE) elements (Y, Gd, Dy and Er). Both interlayer (Ni/RE/) and alloy (Ni-RE/) configurations were studied. The phase sequence during reaction was revealed using real-time x-ray diffraction whereas the elemental diffusion and growth kinetics were examined by real-time Rutherford backscattering spectrometry. All RE elements studied exert a similar influence on the solid phase reaction. Independent of the RE element or its initial distribution a ternary Ni 2 Si 2 RE phase forms, which ends up at the surface after NiSi growth. With respect to growth kinetics, the RE metal addition hampers the Ni diffusion process even for low concentrations of 2.5 at. %, resulting in the simultaneous growth of Ni 2 Si and NiSi. Moreover, the formation of Ni 2 Si 2 RE during NiSi growth alters the Ni diffusion mechanism in the interlayer causing a sudden acceleration of the Ni silicide growth. *

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“…Ni is known to form a laterally uniform nickel silicide film at relatively low temperatures via the Ni diffusion-controlled growth mechanism, 11,12 while ErSi 2−x forms at a slightly higher temperature (∼400°C) via Si diffusion, following a nucleationcontrolled mechanism. 13 We anticipate the initiation of uniform nucleation of the ErSi 2−x layer on the surface of the preformed nickel silicide layer. On the basis of diverse characterization results, the removal of recessed surface defects by the Ni interlayer is confirmed, and detailed information on the silicidation mechanism of an Er/Ni/Si system is suggested.…”

Section: Introductionmentioning

confidence: 99%

Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer

Choi

Kang

et al. 2014

ACS Appl. Mater. Interfaces

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An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

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The formation of silicides from thin films of some rare-earth metals

Cited by 151 publications

References 17 publications

Planar defects and double-domain epitaxy in epitaxial YSi2−x and ErSi2−x thin films on Si substrates

Planar defects and double-domain epitaxy in epitaxial YSi2−x and ErSi2−x thin films on Si substrates

In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer

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