<i>In situ</i> study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

Demeulemeester, Jelle; Knaepen, Werner; Smeets, Dries; Schrauwen, A; Comrie, C.M.; Barradas, N.P.; Vieira, Armando; Detavernier, Christophe; Temst, Kristiaan; Vantomme, André

doi:10.1063/1.3681331

Cited by 7 publications

(3 citation statements)

References 39 publications

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“…They reported that the Ni silicide stability could be improved, especially with alloying elements such Pd, Pt, W, Rh, Mo and Ta. Other methods have been used to introduce the alloying element such as interlayer, capping layer or sandwich configuration [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration

et al. 2022

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The effect of Co, Pd and Pt ultrathin films on the kinetics of the formation of Ni-silicide by reactive diffusion is investigated. 50nm Ni/1nm X/ 50nm Ni (X=Co, Pd, Pt) deposited on Si(100) substrates are studied using in-situ and ex-situ measurements by X-ray diffraction (XRD). The presence of Co, Pd or Pt thin films in between the Ni layers delays the formation of the metal rich phase compared to the pure Ni/Si system and thus these films act as diffusion barriers. A simultaneous silicide formation (δ-Ni2Si and NiSi phases) different from the classic sequential formation is found during the consumption of the top Ni layer for which Ni has to diffuse through the barrier. A model for the simultaneous growth in the presence of a barrier is developed and simulation of the kinetics measured by XRD are used to determine the permeability of the different barriers. Atom probe tomography (APT) of the Ni/Pd/Ni system shows that the Pd layer is located between the Ni top layer and δ-Ni2Si during the silicide growth, in accordance with a silicide formation controlled by Ni diffusion through the Pd layer.The effect of the barrier on the silicide formation and properties is discussed.

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Section: Introductionmentioning

confidence: 99%

Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration

et al. 2022

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“…[27][28][29] Consequently, Ni silicide with an interlayer of another metal can be considered important not only to improve thermal stability but also to modify the Schottky barrier height of Ni silicide for conventional MOSFETs and SBMOSFETs. Although there have been some studies about Ni silicide with an Er interlayer, 30,31) the electrical characteristics of this structure has not been investigated in depth. Moreover, Ni silicide with an interlayer in a different position has rarely been studied.…”

Section: Introductionmentioning

confidence: 99%

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Oh¹,

Shin²,

Li³

et al. 2014

Jpn. J. Appl. Phys.

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In this paper, Ni silicide formed with a Ni/Er/Ni/TiN structure is proposed, and the thermal stability and electrical properties of the proposed Ni silicide with an Er interlayer in different positions are studied for application to source/drain of MOSFETs. Ni silicide with Ni/Er/Ni/TiN structures showed not only improved thermal stability but also lower sheet resistance than an Er/Ni/TiN structure. Moreover, proposed Ni/Er/Ni/TiN (2/2/ 11/10 nm) structure exhibited great barrier height and low ideality factor similar to the Er/Ni/TiN structure which could reduce the contact resistance between silicide and doped source/drain region. Therefore, proposed silicide using Ni/Er/Ni/TiN (2/2/11/10 nm) structure is promising for MOSFET source/drain due to better thermal stability, low sheet resistance, and excellent electrical properties.

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“…Demeulemeester et al, studied the Ni-REMs (Y, Gd. Dy and Er) Silicides formation properties and their effect on SBH modulation 20 . Ishikawa et al, has shown the decrease in work function of PtSi from 4.92 to 4.57 eV using Yb interlayer 21 .…”

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confidence: 99%

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Babu

Lee

Song

et al. 2020

Sci Rep

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by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10 −8 Ω·cm 2 , which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10 −6 Ω·cm 2 . The current-voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

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In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

Cited by 7 publications

References 39 publications

Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration

Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

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