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Metal induced crystallization (MIC) is a technique that lowers the crystallization temperature of amorphous semiconductors. The process has mainly been used to influence the crystallization of amorphous silicon (a-Si) and multiple studies on this subject have already been performed. The research of the MIC of amorphous Ge (a-Ge) has been mostly limited to the use of a Ni or Al film. This paper focuses on the characterization of the crystallization behavior of a-Ge films in the presence of 20 transition metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, and Al). The kinetics of the crystallization process are also systematically studied for the seven metals that lower the initial crystallization temperature the most. In addition, the influence of the thickness of the metal film was determined for the case of a Au and Al film. A comparison of the influence of the various metals on a-Ge and a-Si is made and the similarities and differences are discussed using existing models for the MIC process

In this work, the reaction mechanism used in the preparation of fluorine-free superconducting YBa(2)Cu(3)O(7-delta) (YBCO) was investigated. To determine which precursor interactions are dominant, a comprehensive thermal analysis (thermogravimetric analysis-differential thermal analysis) study was performed. The results suggest that a three step reaction mechanism, with a predominant role for BaCO(3), is responsible for the conversion of the initial state to the superconducting phase. In the presence of CuO, the decarboxylation of BaCO(3) is kinetically favored with the formation of BaCuO(2) as a result. BaCuO(2) reacts with the remaining CuO to form a liquid which ultimately reacts with Y(2)O(3) in a last step to form YBCO. High temperature X-ray diffraction experiments confirm that these results are applicable for thin film synthesis prepared from an aqueous fluorine-free sol-gel precursor.

We demonstrate for the first time record low Leakage-EOT (3.5x10 -7 A/cm 2 at 1V, EOT=0.49 nm) MIM capacitors fabricated using a low temperature (250 o C) ALD SrTiO 3 (STO) deposition process on ALD TiN bottom electrode. While most previous work on STO used deposition techniques not compatible with high aspect ratio DRAM applications, recent work on ALD STO showed promise on noble-like metal electrodes (Ru, Pt) [1,2]. In this work, a low temperature ALD process with alternative precursor set and carefully optimized deposition and processing conditions enables the use of low-cost, manufacturablefriendly TiN electrode MIMcaps for future DRAM nodes. Composition (Sr-rich) and process optimization allowed minimization of interfacial EOT penalties and leakage reduction by decreasing the density of leakier STO grains. IntroductionMIMcaps with EOTs 0.5 nm and low leakage are required for future DRAM nodes. Alternatives beyond ZrO 2 /Al 2 O 3 /ZrO 2 are needed. STO is a promising candidate, but much of previous work focused on nonconformal deposition techniques. As exception, ALD STO using Sr(thd) 2 precursor for Sr has been reported [1,2] with promising results on noble like metal electrodes such as Ru and Pt. However, these processes required either high deposition temperature and/or post-deposition anneals in oxidizing ambients [1,2], making STO incompatible with TiN. By using an alternative ALD precursor system and optimizing carefully deposition variables, composition and post-deposition processing, we demonstrate for the first time excellent results for STO/TiN.

We have studied the influence of Pt on the growth of Ni silicide thin films by examining the Pt redistribution during silicide growth. Three different initial Pt configurations were investigated, i.e., a Pt alloy (Ni+Pt/⟨Si⟩), a Pt capping layer (Pt/Ni/⟨Si⟩) and a Pt interlayer (Ni/Pt/⟨Si⟩), all containing 7 at. % Pt relative to the Ni content. The Pt redistribution was probed using in situ real-time Rutherford backscattering spectrometry (RBS) whereas the phase sequence was monitored during the solid phase reaction (SPR) using in situ real-time x-ray diffraction. We found that the capping layer and alloy exhibit a SPR comparable to the pure Ni/⟨Si⟩ system, whereas Pt added as an interlayer has a much more drastic influence on the Ni silicide phase sequence. Nevertheless, for all initial sample configurations, Pt redistributes in an erratic way. This phenomenon can be assigned to the low solubility of Pt in Ni2Si compared to NiSi and the high mobility of Pt in Ni2Si compared to pure Ni. Real-time RBS further revealed that the crucial issue determining the growth properties of each silicide phase is the Pt concentration at the Si interface during the initial stages of phase formation. The formation of areas rich in Pt reduce the Ni silicide growth kinetics which influences the phase sequence and properties of the silicides.

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An overview of the merits and applications of batch ALD in a vertical furnace will be presented. We address new material and process developments and throughput enhancement which are key factors for future high-volume manufacturing applications. We present ALD SbOx as a new material on the batch platform. For the workhorse ALD Al2O3 and TiN materials, experimental and simulation results demonstrate that a reduction in cycle time to <21s does not significantly compromise uniformity, resistivity and step coverage. Moreover, batch ALD offers process flexibility in the mitigation of non-idealities, such as growth inhibition, as will be discussed for thermal ALD AlN. The very low non-uniformities < 1% (1σ) for the latter process demonstrate the competitive film properties that can be achieved by batch ALD. With applications as diverse as metal gates in logic, trench capacitor electrodes, capacitor dielectrics, barrier layers and passivation films, batch ALD has firmly established itself at device manufacturers and foundry sites with significant prospects for emerging markets.