The First Step towards a R2R Printing Foundry via a Complementary Design Rule in Physical Dimension for Fabricating Flexible 4‐Bit Code Generator

Abstract

what has demanded from practical applications for collecting the big data. Therefore, to resolve the cost issues, a R2R printing foundry has been highly attracted because the flexible passive components (such as sensor electrodes, capacitors, and antenna) are able to integrate with their flexible active components (such as display, processor, [3] transponder, [4] analogto-digital converter (ADC), [5] operation amplifier [6]) through a R2R inline printing system. [7] However, although sensor electrodes, [8] capacitors, [9] antenna, [10] and thin film transistor (TFT) active matrix-based display [11] have been successfully printed via R2R printing method, they cannot integrate with flexible active components yet through the R2R inline printing system so far. The major reason in difficulty of inline integration of R2R printed passive components with the flexible active components was mainly originated from the incompatibility between printing and vacuum deposition techniques, employed in manufacturing those flexible active components. Although a printing process was incorporated with the vacuum deposition methods in fabricating those flexible active components, it was limited to fabricating only the semiconducting layers, [12] and lacked the scalability required for practical mass production. Thus, those hybrid vacuum deposition and printing processes cannot be incorporated into the R2R printing foundry. To establish the R2R printing foundry concept, the design rule that encompasses physical dimensions and electrical parameters of the fully printed devices should be first established. The design rule in a semiconductor fabrication plant-referred to as the foundry-is a compromised rule between circuit design engineers and process engineers to provide the geometry of an integrated circuit layout with an acceptable cost. However, unlike the Si-chip foundry, the printed devices' physical dimensions and electrical parameters are variable to the rheological parameters of the electronic inks, the web tension, printing speed, and overlay printing registration accuracy (OPRA) of employed R2R printer. Therefore, the design rule of the R2R printing foundry (Figure 1a) should be always comprising characteristics of both employed ink and R2R printer to prove that the R2R printed complementary metal-oxide-semiconductor (CMOS)-based active

Roll‐to‐Roll Gravure‐Printed Carbon Nanotube‐based Transistor Arrays for a Digital Column Chromatograph

“…Therefore, we can confirm that the coated CYTOP layer on the printed SWCNT‐TFT functioned as the electret to transmit the dipole moment of analyte molecules in the nonpolar eluent as induced charges onto the p‐type SWCNT‐TFT so that the dipole moment acted as an indirect n‐type dopant to the SWCNT. [ 28,29 ] Under nonpolar solvents, the transfer characteristics of the CYTOP‐coated SWCNT‐TFTs were nearly identical (Figure 2c) because the low dipole moment of those nonpolar solvents could not induce any charge on the SWCNT layer through the CYTOP layer of the SWCNT‐TFT. However, as the dipole moment of the solvent was increased, the off‐current in the transfer characteristics of the CYTOP‐coated SWCNT‐TFTs was increased depending on the solvents’ dipole moments (Figure 2c).…”

“…Silver nanoparticle‐based ink for gate and drain‐source electrodes and BaTiO 3 nanoparticle‐based dielectric ink, SWCNT with a diameter of 1–1.2 nm and 20 nm length were formulated based on the previously reported method. [ 29 ]…”

“…The silver nanoparticle‐based ink and BaTiO 3 nanoparticle‐based dielectric ink were formulated based on the reported method. [ 29 ] On the rewound PET web, the SWCNT active layer was printed using the formulated SWCNT inks with a speed of 6 m min −1 . Finally, the source‐drain layers were overlay printed using the same silver nanoparticle‐based ink.…”

“…Silver nanoparticle-based ink for gate and drain-source electrodes and BaTiO 3 nanoparticle-based dielectric ink, SWCNT with a diameter of 1-1.2 nm and 20 nm length were formulated based on the previously reported method. [29] Fully R2R Gravure Printed SWCNT-TFT-Based Array: All four layers (gate, dielectric, source-drain, and active) of the SWCNT-TFT array was fabricated on a polyethylene terephthalate (PET) web having a width of 250 mm and a thickness of 100 µm (AH71D, SKC, Korea) via a fully R2R gravure printing system manufactured by i-PEN Korea with an overlay printing registration accuracy of ± 20 µm. For the R2R printing process, the overall printing method and ink conditions were the same as the published papers.…”

A Printed Wireless Triangle‐Wave Generator via a Smartphone

“…For the R2R printing process, the overall printing method and ink conditions were similar to our published results. [ 40 ] PEDOT:PSS, IGZO, Cu, and carbon top electrodes were printed using a R2P gravure printer (i‐PEN, Korea) on the R2R gravure‐printed Ag bottom electrodes. After printing each step, each layer was dried under 150 °C for 5 min.…”