The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Lei, Dian; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Masudy‐Panah, Saeid; Yadav, Sachin; Kumar, Akash; Dong, Yuan; Kang, Yuye; Xu, Shengqiang; Wu, Ying; Huang, Yi‐Chiau; Chung, Hua; Chu, Schubert S.; Kuppurao, Satheesh; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia

doi:10.23919/vlsit.2017.7998170

Cited by 26 publications

(20 citation statements)

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“…GeSn has an extremely high carrier mobility, so it may also be an ideal materials for transistor applications. Due to the significant development of GeSn CVD growth technology, vertically stacked 3-GeSn-nanosheet pGAAFETs (gate-all-around FETs) [ 91 ], GeSn p-FinFETs [ 92 , 93 ], GeSn n-channel MOSFETs [ 94 , 95 ], GeSn/Ge vertical nanowire pFETs [ 96 ], GeSn GAA nanowire pFETs [ 97 ], and GeSn n-FinFETs [ 98 ] have been successfully demonstrated. Additionally, GeSn’s direct band gap property was found to effectively improve the tunneling probability of electrons, making an excellent material for TFET preparation [ 99 , 100 ], this opening a new development direction for the integrated circuit after Moore’s era.…”

Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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“…Based on the GeSnOI platform, a GeSn FinFET has been reported. The schematic diagram of the device structure is shown in Figure 2 i [ 56 ]. The scanning electron microscopy (SEM) image of the device is shown in Figure 2 j [ 56 ].…”

Section: Fabrication Of Si- and Ge-based Thin Film-on-insulators Via Wafer Bonding Methodsmentioning

confidence: 99%

“…The schematic diagram of the device structure is shown in Figure 2 i [ 56 ]. The scanning electron microscopy (SEM) image of the device is shown in Figure 2 j [ 56 ]. The channel lengths and fin width are down to 50 nm and 20 nm, respectively.…”

Section: Fabrication Of Si- and Ge-based Thin Film-on-insulators Via Wafer Bonding Methodsmentioning

confidence: 99%

“…Compared with other reported GeSn p-FETs, record-low S of 79 mV/decade and record-high G m,int of 807 μs/m ( V DS of −0.5 V), as well as highest G m,int /S sat are realized. The result of the comparison for S in GeSn p-FET is shown in Figure 2 k [ 56 ]. These results are the world’s first GeSn FinFETs demonstrated on a GeSnOI substrate with excellent electrical performance.…”

Section: Fabrication Of Si- and Ge-based Thin Film-on-insulators Via Wafer Bonding Methodsmentioning

confidence: 99%

“…( h ) Strain calculation for the GeSnOI wafer based on the comparison of Raman spectra [ 55 ]. ( i – k ) Application of the bonded GeSnOI wafer in the GeSn FinFET [ 56 ]. Reprinted with permission from ref.…”

Section: Figurementioning

confidence: 99%

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Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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The Future ofCMOS: More Moore or a New Disruptive Technology?

El‐Atab

Hussain

2018

Advanced Nanoelectronics

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The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Cited by 26 publications

References 2 publications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

The Future ofCMOS: More Moore or a New Disruptive Technology?

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