The ferromagnetic p-d exchange interaction in Cd1-xVxS

Resonant enhancement enables the discovery and delineation of spin-flip Raman scattering ͑SFRS͒ from free or donor-bound electrons in diluted magnetic semiconductors containing 3d transition-metal ions at doping concentrations. In such studies, the intrinsic g factor of the host, CdTe in the present case, has to be accounted for accurately. The SFRS in CdTe yields the conduction band electron g factor of Ϫ1.676Ϯ0.007 and displays two resonance peaks mediated by free and donor-bound excitons, respectively. Excitonic signature in modulated reflectivity signals the successful formation of Cd 1Ϫx V x Te as an alloy, whereas magnetization measurements show vanadium ions incorporated as V 2ϩ with xϳ4ϫ10 Ϫ4 . SFRS of Cd 1Ϫx V x Te displays vanadium related SFRS shifts of a sign opposite to that of the host. This indicates a ferromagnetic s-d exchange interaction between the s-like conduction electrons and the 3d shell of V 2ϩ in Cd 1Ϫx V x Te; from the linear dependence of the s-d exchange energy as a function of magnetization ␣N 0 , the s-d exchange constant is deduced to be 285Ϯ8 meV.

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The ferromagnetic p-d exchange interaction in Cd_1-xV_xS

Abstract: The p-d exchange interaction in the Cd 1−x V x S (x < 0.001) semimagnetic semiconductor was studied by means of circularly polarized magnetoreflectance and luminescence at T = 1.5 K and magnetic field up to 7 T. The ferromagnetic character of p-d exchange interaction was observed.

Cited by 4 publications

References 22 publications

Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures

Resonant electron spin-flip Raman scattering in CdTe and the diluted magnetic semiconductorCd1−xVx
Tsoi
¹
,
Miotkowski
²
,
Rodríguez
³

et al. 2004
Phys. Rev. B

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The ferromagnetic p-d exchange interaction in Cd1-xVxS

Abstract: The p-d exchange interaction in the Cd 1−x V x S (x < 0.001) semimagnetic semiconductor was studied by means of circularly polarized magnetoreflectance and luminescence at T = 1.5 K and magnetic field up to 7 T. The ferromagnetic character of p-d exchange interaction was observed.

Cited by 4 publications

References 22 publications

Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures

Resonant electron spin-flip Raman scattering in CdTe and the diluted magnetic semiconductorCd1−xVxTsoi1, Miotkowski2, Rodríguez3 et al. 2004Phys. Rev. B

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The ferromagnetic p-d exchange interaction in Cd_1-xV_xS

Resonant electron spin-flip Raman scattering in CdTe and the diluted magnetic semiconductorCd1−xVx
Tsoi
¹
,
Miotkowski
²
,
Rodríguez
³

et al. 2004
Phys. Rev. B