II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures

Dobrowolski, Witold; Kossut, J.; Story, T.

doi:10.1016/s1567-2719(03)15003-2

Cited by 37 publications

(17 citation statements)

References 500 publications

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“…Ge 1−x−y Sn x Mn y Te crystals are solid solutions from the family of IV-VI DMSs [5]. These materials exhibit FM transition due to indirect exchange interaction of the Mn 2+ magnetic ions via the hole gas (the Ruderman-Kittel-KasuyaYosida (RKKY) mechanism) [6,7].…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

et al. 2008

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Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge 1−x−y Sn x Mn y Te single crystals (x = 0.083 ÷ 0.115; y = 0.025 ÷ 0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at T C ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature T f . Magnetic structure of InSe Mn 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.

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Section: Introductionmentioning

confidence: 99%

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

et al. 2008

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“…Moreover, the addition of magnetic ions (such as Mn or Eu) further extends their possible applications. Studies of IV-VI compounds revealed the presence of the carrier induced ferromagnetism caused by the RKKY interaction [3,4] enabling them to be used for future spintronic applications [5].…”

Section: Introductionmentioning

confidence: 99%

AC Magnetic Susceptibility Studies of Ge_1-x-ySn_xMn_yTe Mixed Crystals

et al. 2008

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We present preliminary studies of magnetic and transport properties of Ge 1−x−y Sn x Mn y Te mixed crystals with 0.091 ≤ x ≤ 0.105 and 0.012 ≤ y ≤ 0.115. Qualitative analysis of our experimental results showed the appearance of a spin-glass phase at T < 50 K. The transport characterization (resistivity and Hall effect measurements) showed that the investigated samples had semimetallic p-type conductivity with relatively large carrier concentrations (p > 10 21 cm −3 ) and low mobilities (µ < 100 cm 2 V −1 s −1 ). The dependence of transport properties on the chemical composition of the samples was observed.

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“…Diluted magnetic semiconductors are advanced materials for magneto--electronics due to the possibility of the control of magnetic properties by modulation of the carrier density [1][2][3]. Cr-based diluted magnetic semiconductors are also promising materials for new optoelectronic devices e.g.…”

Section: Introductionmentioning

confidence: 99%

EPR Spectra of Cr in CdTe Crystals

et al. 2005

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The EPR studies of CdTe:Cr were performed on X-band (9.6 GHz) spectrometer at room temperature. Single CdTe crystals were doped by chromium Cr in the synthesis process. The spectra observed were resolved into two spectra. The first one consisted of very broad line (∆B = 100 mT) and the second one showed a typical fine structure. The complete angular dependence measurements were obtained. The fine structure of Cr 2+ or Cr 3+ions was assumed and simulated. It follows from the theoretical analysis of the obtained spectra that degree of ionization of the chromium Cr dopant is 3+.

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II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures

Cited by 37 publications

References 500 publications

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

AC Magnetic Susceptibility Studies of Ge_1-x-ySn_xMn_yTe Mixed Crystals

EPR Spectra of Cr in CdTe Crystals

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II–VI and IV–VI Diluted Magnetic Semiconductors – New Bulk Materials and Low-Dimensional Quantum Structures

Cited by 37 publications

References 500 publications

Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

AC Magnetic Susceptibility Studies of Ge1-x-ySnxMnyTe Mixed Crystals

EPR Spectra of Cr in CdTe Crystals

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Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

AC Magnetic Susceptibility Studies of Ge_1-x-ySn_xMn_yTe Mixed Crystals