Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

Wołoś, Agnieszka; Kamińska, M.

doi:10.1016/s0080-8784(08)00008-2

Cited by 13 publications

(7 citation statements)

References 133 publications

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“…3,4 There is also considerable interest in doping GaN with transition metals, in order to combine magnetic and semiconducting properties, likewise for use in spintronic devices. 5 Silicon as a popular shallow donor in GaN is serving as a source of effective mass electrons, allowing obtaining ntype material. As both electron transport and spin coherence in n-type semiconductors are practically determined by properties of donor bands, we present systematic studies of the Si doping-induced bands in GaN.…”

Section: Introductionmentioning

confidence: 99%

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

et al. 2011

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We investigate the properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and the Hall effect. While increasing the doping concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D 0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, and the D − band of double-occupied Si states is centered at 2.7 meV below the bottom of the GaN conduction band. Strong damping of the magnetic moment occurs due to filling of the D − states at Si concentrations approaching the metal-insulator transition. Simultaneously, shortening of electron spin relaxation time due to limited electron lifetime in the single-occupied D 0 band is observed. The metal-insulator transition occurs at the critical concentration of uncompensated donors equal to about 1.6 × 10 18 cm −3 . Electronic states in metallic samples beyond the metal-insulator transition demonstrate the nonmagnetic character of double-occupied states.

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Section: Introductionmentioning

confidence: 99%

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

et al. 2011

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“…This usually consists of five fine structure lines, each split into a hyperfine sextet. When the magnetic field is parallel to the c-axis the distance between the hyperfine lines is the highest, while at about 50°from that direction the lines merge [18,19] Here, the resonance does not resemble the well-known pattern due to large zero-field splitting of the Mn 2 þ ground state, comparable to the energy of the applied microwaves.…”

Section: Samples and The Experimentsmentioning

confidence: 74%

High-spin configuration of Mn in Bi2Se3 three-dimensional topological insulator

Wołoś

Drabińska

Borysiuk

et al. 2016

Journal of Magnetism and Magnetic Materials

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“…Studies of the electronic structure of defects arising in gallium arsenide doped by manganese have continued for more than fifty years [8][9][10][11][12][13][14][15][16][17][18][19]. It is necessary to note works seeking to investigating of a time depended processes in the system, separately [18,19].…”

Section: Introductionmentioning

confidence: 99%

About anomalous g factor value of Mn-related defects in GaAs:Mn

Yakubenya

Shtel’makh

2016

Appl Magn Reson

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Abstract. The results of experimental investigations of ESR spectra of manganese impurity ions in a GaAs : Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic defects for the system that give rise to lines with g factors of 5.62 and 2.81 in the ESR spectra are studied in some detail. The experimental results are discussed in the framework of a previously developed model with a double defect involving the impurity ion. The "3d 5 + hole" model is a special case of the double defect model in this system. An analytical expression for the covalent renormalization of the g factor of an ESR line in this system is obtained.

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Chapter 8 Magnetic Impurities in Wide Band‐gap III–V Semiconductors

Cited by 13 publications

References 133 publications

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

High-spin configuration of Mn in Bi2Se3 three-dimensional topological insulator

About anomalous g factor value of Mn-related defects in GaAs:Mn

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