The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry

“…The proposed technique has been validated against TCAD simulation [2] for a wide range of device geometries and found to be accurate as long as the channel is fully depleted. In passing, we note that a similar effort for symmetric devices has recently been reported in the charge based modelling approach [3].…”

“…In effect, while calculating DC current and terminal charges [1], V g is replaced with V g , c 1(2) with c 1 (2) and G is replaced with G Na . The perturbation in gate voltage DV g , can be considered as a correction in gate work function that occurs due to body doping and the correction in coupling factor G is analogous to the 'equivalent-thickness concept' proposed in [3] (as in the exact drain current equation [1], the t si term appears as a multiplication factor of G). In this way, the body doping effect is incorporated in all operating regimes without using any fitting parameters, interpolating functions or any transcendental operators.…”

Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET

“…For this specific case of highly doped channel, some more rigorous approaches have already been mentioned in the literature to account for channel doping in threshold voltage: In [18] is developed a method based on an effective channel thickness dependent on channel doping, and in [6] is described a compact analytical model valid from undoped to high-doped channel.…”

Effective Techniques for Optimized Subthreshold Design Using Symmetric Double Gate MOSFET

“…Molybdenum (Mo) has very low resistivity and high melting point, and thin films of Mo with (110) crystallographic texture have been shown to exhibit work functions close to 5 eV. 7 Mo gate electrodes have been successfully used in the fabrication of devices with high permittivity gate dielectrics. Mo has an excellent compatibility with CMOS processing and a matching coefficient of thermal expansion with the Si lattice.…”

“…Therefore, the possibility of using body doping as a tool to tune the threshold voltage seems very grim. 7 In this work, we explore the possibility of a device structure which incorporates the high mobility and less leakage current of the intrinsic channel device as well as the threshold voltage tunability of the doped channel device. The proposed device is identical to the conventional DG MOSFET in all respects, except that part of its channel moderately doped.…”