Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET

Abstract

In this brief, we propose simple and analytical models for threshold voltage and subthreshold slope including shortchannel and quantum effects for fully depleted or undoped double-gate MOS devices.Index Terms-Double-gate device, drain-induced barrier lowering (DIBL), short-channel effects (SCEs), subthreshold slope, threshold voltage.

Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

“…The SS expression reported in [15], although based on this potential model, led to a L 2 g dependence after several approximations, yielding an expression very close to one from [6].…”

“…(10) demonstrates that taking into account the x-dependence of the potential in the VDT is equivalent to replacing the oxide thickness t ox with the effective oxide thickness t eff ox . When t eff ox is injected directly into the SS model presented in [6] (with the correction reported in [7] to deal with depletions regions under the junctions), the agreement with the simulations improves (dashed line on Fig. 1a), but still displays large inaccuracies.…”

“…It was reported in [15] that the exponential VDT model [14] features a higher accuracy than the parabolic one used in [6]. The SS expression reported in [15], although based on this potential model, led to a L 2 g dependence after several approximations, yielding an expression very close to one from [6].…”

“…The Voltage-Doping Transform (VDT) model [4] has already been employed to estimate the SS in bulk [5], as well as in fully depleted architectures [6]. These models have been extended to the case of lightly doped drain (LDD) devices in [7].…”

“…A one-dimensional parabolic potential model was used in [6] to explicit the dependency of / v;c on V g and derive the subthreshold swing. In that case, / v;c is equal to the surface potential / v;s , so that the relationship between V g and / v;c , necessary to evaluate the right-hand side of (2), could be derived immediately from Gauss theorem:…”