Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

Hiblot, Gaspard; Rafhay, Quentin; Bœuf, F.; Ghibaudo, G.

doi:10.1016/j.sse.2015.06.008

Cited by 2 publications

(1 citation statement)

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“…Hence, it is evident from the results that the increase in electron density of GaAs NW results in a decrease in current density, which shows that the current density depends upon the property and nature of the material and is independent of electron density. The inversion charge shifts away from the interface in the charge on the quantum modulation effect on Si and GaAs NW, which has been demonstrated to have no impact on the Subthreshold Slope (SS), as shown previously [ 54 ]. The log-scale (I D -V GS ) transfer curve with V GS at the subthreshold region has been used to calculate the Subthreshold Slope (SS), which is defined as −[d(log 10 I D )/dV G ].…”

Section: Analysis Of the Gaas-based Nanowiresupporting

confidence: 61%

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

2023

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This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La2O3) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n+ donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length LSD = 35 nm, with La2O3 as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (ION/IOFF ratio) of 1.06 × 109, and a low leakage current, or OFF current (IOFF), of 3.84 × 10−14 A. The measured values of the mid-channel conduction band energy (Ec) and charge carrier density (ρ) at VG = VD = 0.5 V are −0.309 eV and 6.24 × 1023 C/cm3, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.

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Section: Analysis Of the Gaas-based Nanowiresupporting

confidence: 61%