Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and it is selected as the world's first industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are first obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as shortchannel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.INDEX TERMS Double-gate FET, FinFET, integrated circuit modeling, MOSFET compact model, RF FinFET, short-channel effects, SPICE, triple-gate FET, UTB-SOI, UTBB-SOI.
The neural network enables efficient solutions for Nondeterministic Polynomial-time (NP) hard problems, which are challenging for conventional von Neumann computing. The hardware implementation, i.e., neuromorphic computing, aspires to enhance this efficiency by custom hardware. Particularly, NP hard graphical constraint optimization problems are solved by a network of stochastic binary neurons to form a Boltzmann Machine (BM). The implementation of stochastic neurons in hardware is a major challenge. In this work, we demonstrate that the high to low resistance switching (set) process of a PrxCa1−xMnO3 (PCMO) based RRAM (Resistive Random Access Memory) is probabilistic. Additionally, the voltage-dependent probability distribution approximates a sigmoid function with 1.35%–3.5% error. Such a sigmoid function is required for a BM. Thus, the Analog Approximate Sigmoid (AAS) stochastic neuron is proposed to solve the maximum cut—an NP hard problem. It is compared with Digital Precision-controlled Sigmoid (DPS) implementation using (a) pure CMOS design and (b) hybrid (RRAM integrated with CMOS). The AAS design solves the problem with 98% accuracy, which is comparable with the DPS design but with 10× area and 4× energy advantage. Thus, ASIC neuro-processors based on novel analog neuromorphic devices based BM are promising for efficiently solving large scale NP hard optimization problems.
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