An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET

UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs

“…Calculation of interface potentials is a key issue in the modeling of IDG MOSFET [6][7][8][9][10]. While an iterative resolution of Poisson's equation is used in [11], we have developed here a very accurate direct calculation of interface potentials.…”

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

“…With (7), these natural bounds are lost. As a consequence, and similarly as in [12], (12) admits infinity of roots in the trigonometric mode, and only the largest one corresponds to the physical solution of the problem. Indeed, other roots give solutions for which Poisson's equation and boundary conditions are satisfied, but with one or more singularities of the vertical potential profile in the thin body.…”

“…We end up with a single equation that takes only two different forms (hyperbolic and trigonometric mode), since the sign of q does not matter, whereas four cases had to be distinguished to choose the input voltage equation in [10], [12], [13], and [22]. In addition, the choice between trigonometric and hyperbolic modes is governed by the sign of q 2 as obtained by (1).…”

“…They either rely on a numerical resolution of the set of equations [8]- [14], on interpolation functions between the transistor operation regimes [15], [16] or on approximation of the potential profile in the thin body [17], [18]. In addition, all the rigorous solutions require an a priori calculation of the boundaries between hyperbolic and trigonometric modes [8]- [10], [12], [13], involving the use of hardly tractable Lambert functions [19]. Since the simplest possible calculation sequence is needed to get an efficient compact model, we have set up a straightforward and a very accurate interface potential analytical calculation procedure valid for low-doped UTBB and independent double-gate transistors.…”

Analysis of Conduction Path Dependent Off-Current of Double Gate MOSFET

“…The multi gate FET (MugFET) is ultimately the transistor to lessen the SCEs by making the gates of two above around channel of transistor. The double gate MOSFET (DGMOSFET) is the simplest and representative MugFET [1,2]. Tiwari et al have used the Gaussian function as doping profile to solve the Poisson equation and presented successfully the analytical potential and threshold voltage model, compared with experimental results [3].…”