The electronic surface barrier of boron-doped diamond by anodic oxidation

Abstract

It was shown that a strong anodic oxidation of 100-oriented diamond induces the electronic surface states, which pin the surface Fermi level at about 3.6 eV above the valence-band maximum. The characteristics of the electronic surface barrier were evaluated from the analysis of boron-doped diamond electrodes and correlated with the four-point probe measurements of an oxidized diamond resistor with a boron delta-doped channel. The same evaluation procedure applied to the case of a wet chemical oxidation yielded a surface barrier of 1.9 eV, which is consistent with the data in the literature. The characteristics of the 3.6 eV barrier by the anodic oxidation remained stable after subsequent chemical treatments even at elevated temperatures, and were also not degraded in air for a long time. The x-ray photoemission spectroscopy study showed that the anodic oxidation generates complex oxygen functionalities, like polycarbonate groups, and also C-O-C bridging bond structures with possible contribution of an additional chemisorbed layer.

Oxygen‐Terminated Nanocrystalline Diamond Film as an Efficient Anode in Photovoltaics

“…After hydroxylation, the OH-NCD C1s peak reveals an upshifted component at about 1.6 eV (component B) with respect to the bulk C1s peak, which can be assigned to the hydroxyl groups. [20][21][22][23][24] Figure 2a-iii shows the C1s spectrum of O-NCD, which shows chemically shifted components at 286.8 eV (component C) attributable to C¼O species on the diamond surface. [23,25,26] The relative oxygen content on the three diamond films with different terminations is illustrated in Figure 2b; the XPS O1s spectra show increasing amount of O-containing species for H-NCD, OH-NCD, and O-NCD, respectively.…”

Transport behavior of holes in boron delta-doped diamond structures

“…This empirical relationship represents the appropriate weighting for transport mechanisms from the bulk and the delta layer for each mode taking influence from Eq. (12). As such, the first term is a simplified form of Eq.…”

“…where h is Planck's constant, N(z) is the doping profile, q is the 2D wave vector of the hole,  (q) is the static dielectric screening function, F(q,z) 2 is the hole overlap integral (dependent on the hole location),  is the angle between the incident and the scattered hole, and  k is the energy of the hole with wave vector k. From (12), and applying Matthiessen's rule to include the bulk scattering rate, we calculate the total relaxation rate at room temperature and hence the total mobility for the holes in the subband.…”

“…There is also concern over the stability of hydrogen terminated surface FETs at the high junction temperatures and drain voltages required for high output power. As such there is also interest in devices 3 using the more stable oxygen-terminated surface, despite its high interface state density which impacts device performance [12].…”

Electrochemical characteristics of boron doped polycrystalline diamond electrode sintered by high pressure and high temperature

“…The impedance spectrum in the absence of electro-active species presents two semicircle arcs, which can be described by a simple equivalent circuit consisting of two RC elements in a series, as shown in the insert of Fig. 9 [17]. The RC element corresponding to the high-frequency semicircle represents the impedance resulting from the resistance of the PCD electrode R d in parallel with the capacitance C d at the contact interface between the B-doped PCD electrode and the electrolyte solution.…”