The Electrical Properties of PrBaCuO in YBaCuO/PrBaCuO/YBaCuO Junction

Kimura, Hiroshi; Watabe, H.; Mukae, Kazuo; Okabe, Yoshinobu

doi:10.1007/978-4-431-68266-0_242

Cited by 1 publication

(2 citation statements)

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“…According to the theory of the VRH conduction, a density of localized state is increased with decreasing the value of TO. The temperature dependence of the resistivity of PBCO can be controlled by changing the cooling process after the deposition [8]. In our experiment, we fabricated the device using the PBCO which showed the lowest resistivity of all we could obtain, because the PBCO with the lowest resistivity, we believe, had the longest coherent length.…”

Section: Discussionmentioning

confidence: 98%

“…The width and the depth of the groove were 0.2pm and 130nm respectively. The detail structure and characteristics of the planar type junction with the groove were reported previously [8]. Above the temperature of the critical temperature (Tc) of YBCO, the source-drain resistance was dominated by the resistance of the superconducting electrode, since the resistance under the groove is still lower than the spreading resistance of electrodes.…”

Section: B Characteristics Of the Three Terminal Devicementioning

confidence: 97%

See 1 more Smart Citation

Fabrication of field effect devices based on YBaCuO/PrBaCuO/YBaCuO junctions

Kimura

Okabe

Kamijo³

1995

IEEE Trans. Appl. Supercond.

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A bstmet-In order to investigate an electric field effect in the junction, the three terminal device was fabricated. When the gate voltage of +2V (E=7x104 V/cm) was applied, the drain-source resistance decreased above the temperature of 100K. However, the electric field effect could not be observed below the temperature of 100K. Above the temperature of loOK, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level = 26.5 meV).

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Section: Discussionmentioning

confidence: 98%

Section: B Characteristics Of the Three Terminal Devicementioning

confidence: 97%