One-dimensional diffusion of excitons in GaAs quantum wires was observed by using microphotoluminescence measurements at low temperature. The observed diffusion length increased with decreasing wire width from 30 to 15 nm, and decreased from 15 to 7 nm, where maximum diffusion length was about 4 μm for the 15 nm quantum wire, which is the largest value so far reported. It is considered that the change of diffusion length versus wire width is caused by the competition between one-dimensional character and the interface fluctuation.
We observed a very sharp photoluminescence peak from a single GaAs/AlGaAs quantum dot structure by using a microphotoluminescence measurement technique. The spectral linewidth was more suppressed by decreasing the excitation laser power, which is mainly due to reduction of the filling effect of quantized energy levels. The minimal spectral linewidth with low excitation laser power was 0.9 meV.
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