In order to realize highly reliable low-k/Cu interconnects, optimum BEOL structures were developed for 130, 90 and 65 node logic devices respectively. For 65 nm node BEOL structure, the conventional monolithic dual damascene (DD) stmcture was replaced by the hybrid-DD structure with PAriSiOC stack films. It shows high extendibility to the next generation using newly developed technologies, such as eBeam cure and damage restoration techniques.

We studied transport properties through a YBa2Cu3O y (YBCO) surface etched by exposure of the YBCO surface to an Ar ion beam. In layered junctions of Au/(100)-oriented YBCO with the etched surface, Poole-Frenkel emission was detected by analyzing current-voltage curves. This suggests that a relatively thick insulating layer was formed on the YBCO surface by damage resulting from the Ar ion beam etching.

Cross-sectional observation has been performed in a (103)-oriented YBa2Cu3O x (YBCO)/ SrTiO3 (STO)/(013)-oriented YBCO tunnel junction. Transmission electron microscope (TEM) image revealed that dominant structures of the top and bottom YBCO layers are formed by (100)-, (010)- and (001)-planes at the YBCO/STO interfaces and that amorphouslike layers exist at both the top YBCO/STO and STO/bottom YBCO interfaces.

No abstract

No abstract