Fabrication of field effect devices based on YBaCuO/PrBaCuO/YBaCuO junctions

Abstract

A bstmet-In order to investigate an electric field effect in the junction, the three terminal device was fabricated. When the gate voltage of +2V (E=7x104 V/cm) was applied, the drain-source resistance decreased above the temperature of 100K. However, the electric field effect could not be observed below the temperature of 100K. Above the temperature of loOK, it is found that the CuO chain in PBCO behaved itself as a doped semiconductor (acceptor level = 26.5 meV).

High- transistors

“…Therefore, the design of these high-T c JOFETs differs significantly from the structure of their low-T c counterparts [38], which are based on superconductorsemiconductor-superconductor weak links, in which the channel is superconducting due to the proximity effect. High-T c versions of such a proximity-effect JOFET consisting of YBa [165] and by Tarutani et al [166], respectively. In the latter work, the I DS (V DS ) characteristic of a link 50 nm long was…”