The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Yıldız, D. E.; Altındal, Ş.; Tekeli, Z.; Özer, Metin

doi:10.1016/j.mssp.2010.02.004

Cited by 23 publications

(7 citation statements)

References 25 publications

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“…Therefore, J-V curve in the forward direction was analyzed using thermionic-emission theory [4][5][6]20,21]. Thermionic-emission theory can be expressed as (V43kT/q) [20] …”

Section: Resultsmentioning

confidence: 99%

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Yıldız

Karakus

Toppare

et al. 2014

Materials Science in Semiconductor Processing

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“…Therefore, J-V curve in the forward direction was analyzed using thermionic-emission theory [4][5][6]20,21]. Thermionic-emission theory can be expressed as (V43kT/q) [20] …”

Section: Resultsmentioning

confidence: 99%

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Yıldız

Karakus

Toppare

et al. 2014

Materials Science in Semiconductor Processing

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“…There are many studies on the complex electric modulus M * formalism with regard to the analysis of dielectric or insulator materials [27,28]. The complex impedance Z * or the complex permittivity ε * = 1/M * data are transformed into the M * formalism using the following relation [11,[26][27][28].…”

Section: Frequency Dependence Of Dielectric Propertiesmentioning

confidence: 99%

“…The complex impedance Z * or the complex permittivity ε * = 1/M * data are transformed into the M * formalism using the following relation [11,[26][27][28].…”

Section: Frequency Dependence Of Dielectric Propertiesmentioning

confidence: 99%

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

et al. 2016

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An (Au/Ti)/Al2O3/n-GaAs structure with thin (30 Å) interfacial oxide layer (Al2O3), formed by atomic layer deposition technique is fabricated to investigate both frequency and applied bias voltage dependences of real and imaginary parts of dielectric constant (ε and ε ) and electric modulus (M and M ), loss tangent tan δ and ac electrical conductivity σAC in a wide frequency range from 1000 Hz to 1 MHz at room temperature. The dielectric properties of the (Au/Ti)/Al2O3/n-GaAs metal-insulator-semiconductor structure are obtained using the forward and reverse bias capacitance-voltage (C-V ) and conductance-voltage (G/ω-V ) measurements in the applied bias voltage range from -4 V to +4 V, at room temperature. Experimental results show that the dielectric parameters were strongly frequency and voltage dependent. For each frequency the (C-V ) plots show a peak and the change in frequency has effect on both the intensity and position of the peak. ε , ε and tan δ decrease with increasing frequency, whereas σAC increases with increasing frequency at applied bias voltage. M increases with the increasing frequency and reaches a maximum. M shows a peak and peak position shifts to higher frequency with increasing applied voltage. It can be concluded that the ε , ε , tan δ, M , M and σAC values of the (Au/Ti)/Al2O3/ n-GaAs structure are strongly dependent on both the frequency and applied bias voltage especially in the depletion and accumulation region. Also, the results can be deduced to imply that the interfacial polarization is easier at low frequencies, therefore contributing to the deviation of dielectric properties and AC electrical conductivity of (Au/Ti)/Al2O3/n-GaAs structure.

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“…Silicon is one of the most used semiconductors in electronic devices. In these devices in order to improve performance, some dielectric materials such as SnO 2 and TiO 2 are used instead of SiO 2 [8,9]. It is assumed that these highly dielectric materials at the interface improve performance of the device by preventing diffusion between metal and semiconductor and deactivating most of the surface states.…”

Section: Introductionmentioning

confidence: 99%

TiO2 Interface Instead of SiO2 in Terms of Dielectric Coefficient

et al. 2021

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In this study, Ag/TiO 2 /n-InP/Au structure is formed by sputtering method and its reverse bias characterisation is made. n type InP semiconductor used in this study is 500 μm thick and has a carrier density of 3.13 × 10 18 cm −3 . Thickness of TiO 2 interface layer is adjusted as 60 Å. Some fundamental properties of the structure are investigated in a wide temperature range (120-360 K). Ln(I r /E r ) vs E 0.5 plots are drawn by using reverse bias data. Barrier height and dielectric coefficient of TiO 2 interfacial layer are determined. The importance of this study is, it discusses whether TiO 2 can be used instead of SiO 2 as an interfacial layer in Shottky barrier diodes or not. Also this study proves that dominant current conduction mechanism in Ag/TiO 2 /n-InP/Au structures can be explained with Frenkel-Poole emission or Schottky emission.

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The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Cited by 23 publications

References 25 publications

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

TiO2 Interface Instead of SiO2 in Terms of Dielectric Coefficient

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The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Cited by 23 publications

References 25 publications

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

TiO2 Interface Instead of SiO2 in Terms of Dielectric Coefficient

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Product

Resources

About

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature