Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Yıldız, D. E.; Karakus, Melike; Toppare, Levent; Çırpan, Ali

doi:10.1016/j.mssp.2014.06.038

Cited by 18 publications

(8 citation statements)

References 32 publications

(52 reference statements)

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“…Therefore, the dominant transport mechanism in these thickness range are under PF effect which is a kind of trap assisted transport mechanism and this charge transport is the bulk‐limited conduction mechanisms . It is known that the I R flow for this transport is the emission of electrons from the metal/organic layer interface trapped state into a continuum of states which correlated conductive dislocation in PF transport and the potential barrier and direct tunneling effect charge emission from trap located in field region . In addition, Table shows the β (experimantal) are closer to the calculated β SC(theorical) values for 90 nm, 100 nm, 110 nm, and 140 nm.…”

Section: Resultsmentioning

confidence: 52%

“…The leakage current ( I R ) associated with Poole‐Frenkel effect is written as

I = normalA A^{*} T^{2} normale normalx normalp (|, - \frac{Φ_{B}}{k T}) normale normalx normalp ([]|, (|, \frac{β_{P F}}{k T}) E^{1 / 2})

where β PF is the Poole‐Frenkel coefficient given by

β_{P F} = {(\frac{q}{π ε_{normalo} ε})}^{1 / 2}

and Poole‐Flenkel coefficient is twice as Schottky coefficient, that is, β PF = 2β sc . The value of dielectric capacitance C d is determined as 10 nF at 10 kHz for all diodes and ε can be obtained via the equation below:

C_{d} = \frac{ε ε_{o} A}{d}

…”

Section: Resultsmentioning

confidence: 99%

“…It can be used as active layers in OPVs or OLEDs and in our previous study, optical properties of PFTBT have been studied . It is clear that the molecular organization of organic semiconductors are affected by morphology characteristics and charge transport . It is known that each organic semiconductors exhibited different behavior in organic devices.…”

Section: Introductionmentioning

confidence: 96%

“…Therefore, some researchers have worked on Mott‐Schottky or p‐n junction . For example, Blakesley and Neher have investigated doping density (NA) and the built‐in voltage of glass/ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al organic device and there are other groups investigating forward current‐voltage characteristics using thermionic emission mechanism at the heterojunction diode . In the book of Sze, a current–voltage relationship and the expression of thermionic emission (TE) current are given.…”

Section: Introductionmentioning

confidence: 99%

“…It is crucial to distinguish charge transport mechanisms as Schottky emission, Poole‐Frenkel, Space charge‐limited conduction. For that matter researchers set sight on charge transport and informed exhaustive information on charge transport mechanism where there are still challenging problems …”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer‐based heterojunction diode

Yıldız

Apaydın

Toppare

et al. 2017

J of Applied Polymer Sci

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In this study, thickness‐dependent current density–voltage (J–V) characteristics obtained for poly{(9,9‐dioctylfluorene)−2,7‐diyl‐(4,7‐bis(thien‐2‐yl) 2‐dodecyl‐benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based heterojunction diode fabricated on ITO were investigated in terms of electrical characteristics. In order to analyze J–V plots with ITO/PEDOT:PSS/PFTBT:PC61BM/LiF/Al configuration, the thickness‐dependent J–V measurements were applied in the thickness range between 90 and 200 nm. The effect of PFTBT:PC61BM layer thickness on the forward J–V characteristics were investigated by evaluating electrical parameters such as zero bias barrier height (ΦBo), ideality factor (n), shunt resistance (Rsh), series resistance (Rs), the interface states density (Nss), and space‐charge limited mobility. The results show that at PFTBT:PC61BM layer thickness of 90 and 200 nm, ideality factor for ITO/PEDOT:PSS/PFTBT:PC61BM/LiF/Al heterojunction diodes ranged from 2.726 to 3.121 and the thermionic emission over the heterojunction diodes is crucial at low current densities and the intrinsic thermally generated charge carriers controlled the forward current this region of the heterojunction diode. At relatively higher voltage, the current mechanism of ITO/PFTBT:PC61BM/PEDOT:PSS/LiF/Al heterojunction diodes were found to obey a space charge limited (SCLC) conduction mechanism. The values of Nss and Rs in heterojunction diodes increase with increasing PFTBT:PC61BM layer thickness and effect the main electrical parameters of diodes. In addition, the leakage current of heterojunction diodes are taken and interpreted via Poole‐Frenkel emission and Schottky emission. The leakage current was controlled in ITO/PEDOT:PSS/PFTBT:PC61BM/LiF/Al heterojunction diodes by Poole‐Frenkel emission above 140 nm and by Schottky emission under 140 nm. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017, 134, 44817.

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Section: Resultsmentioning

confidence: 52%

“…The leakage current ( I R ) associated with Poole‐Frenkel effect is written as