Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode

Güllü, H. H.; Yıldız, D. E.; Surucu, O.; Parlak, M.

doi:10.1007/s10854-020-03479-4

Cited by 18 publications

(6 citation statements)

References 83 publications

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“…At low frequencies in the applied AC signal, the charges trapped at these states can be found in a contribution to the

C^{'} ((), w)

and

C^{'}' ((), w)

of ITO/CP1 and CP2/ITO electrodes 72,73 . Conversely, they cannot follow the change in this signal at high frequencies, and this fact can be related to the decrease in these values with an increase in frequency 74 . Figure 10A,C shows the Nyquist plot of the same data after transforming it to complex capacitance for CP1/ITO and CP2/ITO electrodes at scan rates 5 mV/s.…”

Section: Resultsmentioning

confidence: 99%

Selenophene‐containing conjugated polymers for supercapacitor electrodes

Yıldız

Cevher

Yaşa

et al. 2021

Journal of Polymer Science

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In recent years, studies on conjugated polymers have strengthened the researchers' thought that such polymers can play an essential role in developing new generation energy storage devices. Hence conjugated polymer supercapacitor studies have accelerated. In the present work, selenophene‐containing conjugated polymers previously synthesized via palladium‐catalyzed Suzuki polymerization reaction were used in the preparation of conjugated polymer‐based supercapacitor electrodes. The structure and surface morphology of conjugated polymers were determined using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The selenophene‐containing two conjugated polymer electrodes (ITO/Polymer) were fabricated. The electrochemical behavior of the conjugated polymer electrodes was evaluated through cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The specific capacity of ITO/CP1 electrode at 5 mV/s are 161.2 and 47 (Fg−1) for 0.1 mg and 1.2 mg, respectively. The specific capacity of ITO/CP2 at 5 mV/s electrode are 511 and 108.85 (Fg−1) for 0.08 mg and 0.70 mg, respectively. The time constants were determined as 10 and 625 ms for ITO/CP1 and CP2/ITO electrodes, respectively.

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“…At low frequencies in the applied AC signal, the charges trapped at these states can be found in a contribution to the

C^{'} ((), w)

and

C^{'}' ((), w)

Section: Resultsmentioning

confidence: 99%

Selenophene‐containing conjugated polymers for supercapacitor electrodes

Yıldız

Cevher

Yaşa

et al. 2021

Journal of Polymer Science

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“…Besides, the decrease of capacitance at around zero-bias is attributed to the electrical activity of interface traps and deep levels due to higher temperatures. In addition, the changes in capacitance towards high forward biases and high temperatures (around 0.4 V) were also attributed to the reconstruction of the traps and the molecular structure of the interface [35][36][37][38][39].…”

Section: Resultsmentioning

confidence: 99%

“…Figure 10 depicts conductance-applied bias (G-V) plots of the Ni/GO-Fe 3 O 4 /n-Si heterostructure as a function of temperature carried out at 500 kHz applied frequency. The conductance measurements are mainly based on the energy loss resulting from R s and from the interface states with variation of AC signal [36,50]. Namely, when the surface Fermi level is varied with an AC signal, then interface state may capture or emit energy.…”

Section: Resultsmentioning

confidence: 99%

On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe₃O₄)/n-Si heterojunction device over a wide temperature range

Gümüs¹,

Aydoğan²

2020

Semicond. Sci. Technol.

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The purpose of this work is to fabricate a Ni/GO-Fe 3 O 4 /n-Si heterojunction device using Mott-Schottky plots and to study the capacitance-voltage/conductance/series resistance characteristics of the device as a function of temperature. We analyzed temperature dependent capacitance-voltage measurements for the Ni/GO-Fe 3 O 4 /n-Si device in the temperature range from 80 to 360 K. Temperature dependent electrical measurements have been performed at a fixed frequency of 500 kHz and frequency dependent ones have been carried out at room temperature. In the reverse bias capacitance-voltage characteristics figure, it has been determined that the barrier height is 1.73 eV (80 K) and 1.50 eV (360 K) with 20 K steps. The impedance analysis measurements have been performed in the reverse and forward biases. The experimental results have shown that the values of capacitance, conductance, interface states and series resistance R s depend on both bias voltage and temperature.

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“…In this case, the structure of dielectric curves obtained will be similar to the capacity and conductivity curves. Many researchers use these expressions when studying dielectric spectroscopy [46][47][48][49].…”

Section: Resultsmentioning

confidence: 99%

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

et al. 2023

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In this study, Mn doped complexes were produced and used as an interfacial layer in Au/Mn-complex/n-Si structure. For this, metal complex was prepared and added with its material. For this, a mixed ligand complex was prepared and dopped with manganese. The morphological investigations of these structures was fulfilled by using an Atomic Force Microscope. The analyzes showed that relatively smooth and well ordered surfaces. The fabricated structured were characterized using capacitance-voltage (C-V) and conductance-voltage (G/w-V).

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Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode

Cited by 18 publications

References 83 publications

Selenophene‐containing conjugated polymers for supercapacitor electrodes

Selenophene‐containing conjugated polymers for supercapacitor electrodes

On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe₃O₄)/n-Si heterojunction device over a wide temperature range

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

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Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode

Cited by 18 publications

References 83 publications

Selenophene‐containing conjugated polymers for supercapacitor electrodes

Selenophene‐containing conjugated polymers for supercapacitor electrodes

On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

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On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe₃O₄)/n-Si heterojunction device over a wide temperature range