The effects of multiple KrF laser irradiations on the electroluminescence and photoluminescence of rf-sputtered ZnS:Mn-based electroluminescent thin film devices

Mastio, Emmanuel; Thomas, C. B.; Cranton, Wayne; Fogarassy, É.

doi:10.1016/s0169-4332(99)00522-x

Cited by 9 publications

(10 citation statements)

References 11 publications

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“…Hence, such increase in dangling bonds and deeper defects may generate a more uniform interfacial electron energy distribution and unpin the Fermi level of ZnS:Mn, which has been discussed as being crucial for the generation of socalled hot electrons. 24 In other words, we suggest that the increase in lattice misfit reduces the amount of electrons reaching optical energies, thus reducing the overall performance of TFEL devices.…”

Section: Performance Limitation Of Tfel Devices At High Thermal Anmentioning

confidence: 84%

“…In this phosphor system, Mn 2ϩ ions are radiatively activated by direct substitution on Zn 2ϩ lattice sites. 1 Recently, a subband gap PL analysis (E excitation ϽE g,ZnS ) performed on similar structures did show a linear luminescent efficiency increase in the 200-700°C range, 24 as opposed to the nonlinear PL behavior seen in Fig. 4.…”

Section: B Luminescence Improvement Of Zns:mn At High Thermal Annealmentioning

confidence: 94%

“…4͒. However, from 500 to 700°C, the EL operating intensity saturates despite the increased number of active Mn 2ϩ ions, 24 and the beneficial recrystallization effects upon the excitation, radiative, and electronic properties of the active layer. This lack of significant gain in EL signals was previously suggested to be due to a modification of the interface state distribution, which reduces the density of electrons able to reach optical energies when emitted into the phosphor conduction band.…”

Section: Performance Limitation Of Tfel Devices At High Thermal Anmentioning

confidence: 99%

“…In Ref. 24, we discussed that since we were exciting the second lowest excited states of Mn 2ϩ in ZnS, the subband gap PL signals resulting from direct excitation of Mn 2ϩ centers are proportional to the number of active Mn centers and not a function of nonradiative recombination paths. Hence, we do not attribute the sharp increase in PL seen in Fig.…”

Section: B Luminescence Improvement Of Zns:mn At High Thermal Annealmentioning

confidence: 99%

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Lattice misfit versus performance of thin film electroluminescent structures

Mastio

Cranton

Thomas

2001

Journal of Applied Physics

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Thin polycrystalline electroluminescent thin films ͑TFEL͒ of ZnS:Mn ͑phosphor͒ and Y 2 O 3 ͑insulator͒ were deposited individually or as multilayers onto Si ͑100͒ substrates. Their crystallinity and the luminescent efficiency of the phosphor films were investigated at varying thermal annealing temperatures. It is shown that the luminescent quality of the phosphor layer increases up to 700°C, whereas the electroluminescence operating intensity of TFEL devices saturates at 500°C. The structural analysis of the insulating and phosphor layers shows that they recrystallize at annealing temperatures of, respectively, 500 and 600°C, and that their lattice misfit doubles at processing temperaturesϾϭ500°C. Since TFEL devices should benefit from enhanced luminescence efficiency and crystallinity at high annealing temperatures, we suggest that the lack of improvement in device performance beyond 500°C is due to interface alterations. According to previous works, we propose that the lattice misfit increase between the phosphor and dielectric thin films modifies the morphology of the phosphor-insulator boundary inducing a modification of the interface states density, and hence, modifying high field electron transport properties of TFEL devices.

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Section: Performance Limitation Of Tfel Devices At High Thermal Anmentioning

confidence: 84%

Section: B Luminescence Improvement Of Zns:mn At High Thermal Annealmentioning

confidence: 94%

Section: Performance Limitation Of Tfel Devices At High Thermal Anmentioning

confidence: 99%

Section: B Luminescence Improvement Of Zns:mn At High Thermal Annealmentioning

confidence: 99%

See 2 more Smart Citations

Lattice misfit versus performance of thin film electroluminescent structures

Mastio

Cranton

Thomas

2001

Journal of Applied Physics

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show abstract

“…Following an initial period of investigation to determine the optimum experimental arrangement, 3 single or multiple pulsed laser irradiations of ZnS:Mn thin films have been demonstrated to provide enhancements of photoluminescence and electroluminescence. 4,5 Recently, we have studied thermal annealing effects on the crystalline structure of TFEL devices in order to investigate their limitations on performance resulting from processing at high temperatures. 6 It was found that the insulating and phosphor layers recrystallize at annealing temperatures of respectively 500 and 600°C, and that their lattice misfit doubles at processing temperatures Ͼϭ500°C.…”

Section: Introductionmentioning

confidence: 99%