2013
DOI: 10.1016/j.jallcom.2012.09.031
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Structural stability, band structure and magnetic properties of ZnS and Zn0.75Cr0.25S under pressure

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Cited by 13 publications
(3 citation statements)
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“…These results follow the same trend of the theoretical study of Gupta et al . and Huang et al ., but with a better description in value of the band gap of these materials, because that in this simulations we did not use the plane‐wave approximation, on the other hand, tends to overestimate these and other parameters of the electronic structure of these materials, and our results are in line with the experimental results reported by Ves et al …”
Section: Resultssupporting
confidence: 92%
“…These results follow the same trend of the theoretical study of Gupta et al . and Huang et al ., but with a better description in value of the band gap of these materials, because that in this simulations we did not use the plane‐wave approximation, on the other hand, tends to overestimate these and other parameters of the electronic structure of these materials, and our results are in line with the experimental results reported by Ves et al …”
Section: Resultssupporting
confidence: 92%
“…That is to say, they are all stable and external pressure do not change the structural stability of ideal BiVO 4 and Vo‐BiVO 4 . The shear modulus GH, bulk modulus BH are obtained by Voigt‐Reuss‐Hill (VRH) method and can be expressed as: GH=12(GR+Gv), BH=12(B+RBv), where GR, Gv, BR, and Bv are Reuss bulk modulus, Voigt bulk modulus, Reuss shear modulus, and Voigt shear modulus, respectively. Young's modulus E and Poisson's ratio ν are obtained using the following equations: E=9BHGHGH+3BH, ν=3BH2GH2(3BH+GH). The values of GH, BH, GH/BH, E, and ν of ideal BiVO 4 under z‐axial pressure and Vo‐BiVO 4 under equiv...…”
Section: Resultsmentioning
confidence: 99%
“…Recently, DMSs based on III-V and II-VI semiconductors doped with magnetic elements have been intensively studied experimentally [8][9][10][11][12][13][14] as well as theoretically [15][16][17][18][19][20][21][22][23] to predict their magnetic properties with respect to their use in spintronics applications. The (II ¼ Be, Mg, Ca, Sr, and Ba; VI ¼ O, S, Se, and Te) alkaline-earth-chalcogenides belong to the II-VI group and they are important semiconductors due to signicant properties such as large band gaps and valence-band widths.…”
Section: Introductionmentioning
confidence: 99%