Pulsed laser annealing for high-efficiency thin film electroluminescent devices

Abstract

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Lattice misfit versus performance of thin film electroluminescent structures

“…Hence, we inferred that laser annealing can produce the required activation of the thin film phosphors while maintaining a suitable interface state distribution. 29 To conclude, the results of our studies are further evidence that it is important to control the interfacial structure during annealing in order to obtain high-efficiency TFEL devices.…”

“…Very recently, we reported laser processed TFEL devices exhibiting better display performance than equivalent devices thermally annealed at 450°C, as demonstrated by the maintenance of a sharp luminance against voltage characteristic with no drop in threshold voltage and a fourfold increase in brightness. 29 Interestingly, the lattice misfit values measured from similarly laser annealed NTU259 structures are smaller than 1.40, 29 which is lower than the values measured from thermally annealed NTU259 structures at 500°C ͑Table II͒. Hence, we inferred that laser annealing can produce the required activation of the thin film phosphors while maintaining a suitable interface state distribution.…”

Performance enhancement of ZnS:Mn thin film electroluminescent devices by combination of laser and thermal annealing

“…We consider that the greatest benefit of laser annealing lies with the fact that it performs highly localized heat treatment [8]. As mentioned earlier, this permits the usage of temperature sensitive substrates, which would allow the application of the mature display technology of TFEL for producing flexible displays.…”

Laser annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering

“…However, previous work has shown that transparent ITO and Y 2 O 3 can be deposited onto polymeric materials using HiTUS, without damaging the substrate [5,6]. Additionally, due to the localized heating of the laser used throughout this work, it has been shown that the annealing process can be applied to thin films deposited onto temperature-sensitive substrate materials [7]. Hence the work here presents the first step to realizing high-luminance, fully transparent EL devices on flexible substrates.…”