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Amorphous hafnium oxide ͑HfO x ͒ is deposited by sputtering while achieving a very high k ϳ 30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfO x ͑cubic k ϳ 30͒. The films also possess a high electrical resistivity of 10 14 ⍀ cm, a breakdown strength of 3 MV cm −1 , and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate ͑ϳ25 nm min −1 ͒ makes these high-k amorphous HfO x films highly advantageous for plastic electronics and high throughput manufacturing.

Abstract:Tin doped indium oxide (ITO) has been directly deposited onto a variety of flexible materials by a reactive sputtering technique that utilises a remotely generated, high density plasma. This technique, known as high target utilisation sputtering (HiTUS), allows for the high rate deposition of good quality ITO films onto polymeric materials with no substrate heating or post deposition annealing. Coatings with a resistivity of 3.8 ×10−4 Ωcm and an average visible transmission of greater than 90% have been deposited onto PEN and PET substrate materials at a deposition rate of 70 nm/min. The electrical and optical properties are retained when the coatings are flexed through a 1.0 cm bend radius, making them of interest for flexible display applications.

A novel rf sputtering technology in which a high density plasma is created in a remote chamber has been used to reactively deposit zinc oxide (ZnO) and indium zinc oxide (IZO) thin films at room temperature from metallic sputtering targets at deposition rates ∼50 nm min −1 , which is approximately an order of magnitude greater than that of rf magnetron sputtering. Thin film transistors have been fabricated using IZO with a maximum processing temperature of 120 • C, which is defined by the curing of the photoresist used in patterning. Devices have a saturated field effect mobility of 10 cm 2 V −1 s −1 and a switching ratio in excess of 10 6 . Gate bias stress experiments performed at elevated temperatures show a consistent apparent increase in the field effect mobility with time, which is attributed to a charge trapping phenomenon.

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