Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

Wakeham, Steve; Thwaites, M.J.; Holton, B. W.; Tsakonas, C.; Cranton, Wayne; Koutsogeorgis, Demosthenes C.; Ranson, Robert

doi:10.1016/j.tsf.2009.04.072

Cited by 48 publications

(36 citation statements)

References 26 publications

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“…The ability to generate a high flux of low energy ions has been shown to be beneficial for most thin film deposition processes [13]. This investigation extends the original work of Wakeham et al [11] with the aim of developing a large area ITO process for use on polymeric substrates. After initial optimization of the deposition parameters, two sets of ITO films were deposited onto glass and silicon to explore the effects of varying the plasma power for films deposited under optimized and oxygen depleted conditions.…”

Section: Introductionsupporting

confidence: 52%

“…Thin film deposition ITO films were reactively sputtered from a metallic 90:10 wt.% In:Sn (purity 99.99%) target at different oxygen flow rates and plasma powers using an in-line large area remote plasma system (details of the technology are discussed elsewhere [11,14,15]) onto glass and silicon substrates. A schematic diagram of the system is shown in Fig.…”

Section: Experimental Techniquementioning

confidence: 99%

“…The doping efficiency is related to the energy delivered to the growing film during deposition. To effectively dope the ITO, commercial films are deposited at high temperature [10,11].…”

Section: Introductionmentioning

confidence: 99%

“…These properties not only make flexible devices attractive to the end customer, but also enable efficient mass manufacturing using 'roll to roll' processes [10]. However, due to the thermal sensitivity of polymers, sputter deposition of high quality ITO remains an area of intense research [11].…”

Section: Introductionmentioning

confidence: 99%

“…Wakeham et al [11] deposited ITO with a specific resistivity of 3.8 × 10 − 4 Ω cm and average visible (400-750 nm) light transmission (VLT) greater than 90%, on to a range of flexible substrates (< 15 mm diameter bend radius) using a remote plasma system. The high quality of the ITO was attributed to the increased energy at the substrate surface as a result of the high density plasma (10 13 ions cm −3 ), used in this sputtering process.…”

Section: Introductionmentioning

confidence: 99%

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Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

et al. 2011

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Section: Introductionsupporting

confidence: 52%

Section: Experimental Techniquementioning

confidence: 99%

“…The doping efficiency is related to the energy delivered to the growing film during deposition. To effectively dope the ITO, commercial films are deposited at high temperature [10,11].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

et al. 2011

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Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

352

288

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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A new reactive sputtering technique for the low temperature deposition of transparent light emitting ZnS:Mn thin films

Wakeham

Thwaites

Tsakonas

et al. 2010

Physica Status Solidi (a)

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The temperature sensitive nature of the substrates used in the flexible displays market necessitates a low temperature deposition technique for processing them. ZnS:Mn exhibiting high intensity photoluminescence and good crystallinity has been deposited onto Si wafers, glass microscope slides and polymeric substrates using a new reactive sputtering technology referred to as HiTUS. This technique enables very high deposition rates and requires no substrate heating. When incorporated as part of a complete EL device, as-deposited ZnS:Mn films are seen to exhibit stable electroluminescence on Si, glass and planarised PET substrate materials. Post annealing of the devices on Si and glass at temperatures of up to 600 °C show that the HiTUS films perform better than equivalent ZnS:Mn films deposited using RF magnetron sputtering.Copyright line will be provided by the publisher 1 Introduction This work compares two different sputtering techniques for the deposition of alternating current thin film electroluminescent (ACTFEL) devices. High target utilisation sputtering (HiTUS) is a new method for sputtering thin films that allows for the deposition of working electroluminescent (EL) structures with no substrate heating or post deposition annealing [1]. However, here we look at the effect of post deposition annealing HiTUS devices that have been deposited onto silicon and glass substrates with no substrate heating. Radio frequency (RF) magnetron sputtering has also been used for the fabrication of comparable devices with both substrate heating and post deposition annealing. The results of quantitative EL measurements for structures deposited using these two techniques are presented here.

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Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

Cited by 48 publications

References 26 publications

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

Transparent Electrodes for Efficient Optoelectronics

A new reactive sputtering technique for the low temperature deposition of transparent light emitting ZnS:Mn thin films

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