The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

Leem, Shi Jong; Shin, Young Chul; Kim, Kyoung Chan; Kim, Eun Hong; Sung, Yun Mo; Moon, Young Lae; Hwang, Soon Jung; Kim, Tae Geun

doi:10.1016/j.jcrysgro.2008.10.047

Cited by 45 publications

(38 citation statements)

References 19 publications

(17 reference statements)

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“…Therefore, in addition to the advantage of offering a better optical confinement in the slab waveguide structure, the In 0.03 Ga 0.97 N WGLs may significantly improve the emission efficiency of the active region. This advantage has also been observed in violet LD structures and in InGaN/GaN MQW structure with the InGaN layer underlying the active regions [12][13][14][15]. EL characteristics of structure D indicate that the LD structure with In 0.03 Ga 0.97 N waveguides will have higher optical gain for lasing.…”

Section: Effect Of Ingan Waveguiding Layersmentioning

confidence: 73%

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Liu

Zhang

Lochner

et al. 2011

Journal of Crystal Growth

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Section: Effect Of Ingan Waveguiding Layersmentioning

confidence: 73%

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Liu

Zhang

Lochner

et al. 2011

Journal of Crystal Growth

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“…These results indicate that the strain in the QWs is reduced by the insertion of the SL. It is considered that all the LEDs were affected by the SL, which relieves the strain in the QWs, as reported by Leem et al [18]. Table 1 The wavelength and the wave shift of the LEDs.…”

Section: Figurementioning

confidence: 89%

Effect of superlattice on light output power of InGaN‐based light‐emitting diodes fabricated on underlying GaN substrates with different dislocation densities

Sugimoto

Denpo

Okada

et al. 2016

Phys. Status Solidi C

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We evaluated the electrical properties of InGaN‐based light‐emitting diodes (LEDs) with a surperlattice (SL) layer just below the MQWs for forming V‐shaped pits (V‐pits) on underlying GaN substrates with different dislocation densities (DDs). The SL was effective for improving the EL intensity for all the LEDs with different DDs. However, the improvement ratio decreased with decreasing DD. The SL is effective for performance improvement of the LEDs with high DDs. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Therefore, we obtained lower direct resistance using the SL or undoped/Si-doped structure. The SL improves the current spread and electron distribution 13,14 and reduction of internal polarization fields and strains in the active region 15 . Hence, we speculate forward voltage was decreased by the prevention of carrier crowding and the improved the electron distribution.…”

Section: Methodsmentioning

confidence: 99%

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

Yamashita

Sugiyama

Iwai

et al. 2014

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

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A GaN layer of 20 µm thickness grown by the liquid-phase epitaxy on c-plane sapphire was used as a template for the growth of blue light-emitting diodes (LEDs) with emission peak wavelengths of about 450 nm. As the underlying layer of the active region, an InGaN/GaN superlattice or two pairs of 100 nm undoped GaN and 20 nm GaN:Si layers on an n-type GaN:Si layer was found to be effective for reducing the forward voltage. By optimizing the multiple-quantumwell structure, LEDs having a 2.5-nm-thick InGaN well and 5-nm-thick GaN barrier exhibited the highest internal quantum efficiency (IQE) at both low and high currents. This IQE was much higher than that of LEDs on a sapphire substrate. The IQE of LEDs using the liquid-phase GaN grown on sapphire substrate exceeded more than 75% at a forward current density of over 200 A/cm 2 .

show abstract

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

Cited by 45 publications

References 19 publications

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Effect of superlattice on light output power of InGaN‐based light‐emitting diodes fabricated on underlying GaN substrates with different dislocation densities

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

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