Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Effect of metallurgical step-graded quantum barrier on the performance of InGaN-based laser diode

“…Majorly, these devices are restricted by the built-in polarization and carrier deficiency in the active region [10], high amount of electron seepage [11], reduced threshold current density [12], limited laser power [13], and lower internal quantum efficiency [14]. Several structural modifications have been instilled in the basic LD structure in order to surpass these major issues and improve the overall performance of these devices; for example, an Al z Ga (1−z) N-based electron blocking layer (EBL) to control electrons overflowing from the active region [15], an Al c In d Ga (1-c-d) N quaternary EBL [16], quantum barriers (QBs) [17,18], and a superlattice configuration in the active region surrounding layers (cladding layers and waveguide layers) [19,20].…”

Application of Quaternary AlInGaN- Based Alloys for Light Emission Devices

“…The rapid advances in the hetero-epitaxy of the group-III nitrides (Fernández-Garrido et al (2008); Kemper et al (2011); Suihkonen et al (2008)) have facilitated the production of new devices, including blue and UV LEDs and lasers, high temperature and high power electronics, visible-blind photodetectors and field-emitter structures (Hirayama (2005); Hirayama et al (2010); Tschumak et al (2010); Xie et al (2007); Zhu et al (2007)). There has been recent interest in the Al x In 1−x−y Ga y N quaternary alloys due to potential application in UV LEDs and UV-blue laser diodes (LDs) once they present high brightness, high quantum efficiency, high flexibility, long-lifetime, and low power consumption (Fu et al (2011);Hirayama (2005); Kim et al (2003); Knauer et al (2008); Liu et al (2011);Park et al (2008); Zhmakin (2011);Zhu et al (2007)). The availability of the quaternary alloy offers an extra degree of freedom which allows the independent control of the band gap and lattice constant.…”

“…Highly conductive p-type III-nitride layers are of crucial importance, in particular, for the production of LEDs. Although the control of p-doping in these materials is still subject of discussion, remarkable progress has been achieved (Hirayama (2005); Zhang et al (2011)) and recently reported experimental results point towards acceptor doping concentration high as ≈ 10 19 cm −3 (Liu et al (2011);Zado et al (2011);Zhang et al (2011)). The group-III nitrides crystallize in both, the stable wurtzite (w) phase and the metastable cubic (c) phase.…”