The Effect of Grain Orientation of β-Sn on Copper Pillar Solder Joints during Electromigration

Xu, Kexin; Fu, Xing; Wang, Xinjie; Fu, Zhiwei; Yang, Xiaofeng; Chen, Si; Shi, Yanling; Huang, Yun; Chen, Hongtao

doi:10.3390/ma15010108

Cited by 9 publications

(7 citation statements)

References 26 publications

(31 reference statements)

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“…Meanwhile, the atomic flux deviation from the c-axis is very limited, and the UBM dissolution and IMC formation seldom occur along the c-axis. Similar results in the solder joints with Cu UBMs were also observed in [ 72 , 73 , 74 ]. Moreover, in the Sn-Pb solder microbump, when the electromigration test was carried out at −196 °C, the anisotropic migration of the Pb did not occur.…”

Section: Effect Of Sn Grain Orientation On Electromigrationsupporting

confidence: 87%

Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints

Shen

2022

Materials

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Sn-rich solder joints in three-dimensional integrated circuits and their reliability issues, such as the electromigration (EM), thermomigration (TM), and thermomechanical fatigue (TMF), have drawn attention related to their use in electronic packaging. The Sn grain orientation is recognized as playing an important role in reliability issues due to its anisotropic diffusivity, mechanical properties, and coefficient of thermal expansion. This study reviews the effects of the Sn grain orientation on the EM, TM, and TMF in Sn-rich solder joints. The findings indicate that in spite of the failure modes dominated by the Sn grain orientation, the size and shape of the solder joint, as well as the Sn microstructures, such as the cycling twining boundary (CTB), single crystals, and misorientations of the Sn grain boundary, should be considered in more detail. In addition, we show that two methods, involving a strong magnetic field and seed crystal layers, can control the Sn grain orientations during the solidification of Sn-rich solder joints.

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Section: Effect Of Sn Grain Orientation On Electromigrationsupporting

confidence: 87%

Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints

Shen

2022

Materials

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“…The paste-printing As shown in the Cu pillar method, a solder cap is formed onto the Cu pillar to join every Cu-filled TSV physically and electrically to stacked TSVs. Si is often electroplated using a photoresist and lithography to regulate the bump size precisely [270]. Tanida et al [223] used a photoresist mold to create a small bump with a fine pitch.…”

Section: Cu Pillarsmentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

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“…He pointed out that the distribution of the current density and temperature gradient in the Sn58Bi solder matrix under current stress can induce a severe crowding effect [ 13 ]. Xu conducted that the anode received a large number of Cu atoms from the cathode, and a large amount of IMC accumulated with the current stressing at 1.5 × 10 4 A/cm 2 at 125 °C, which mainly consisted of Cu 6 Sn 5 and Cu 3 Sn [ 14 ]. Meanwhile, the orientation of the Sn grain had a considerable effect on the diffusion of Cu and electromigration damage.…”

Section: Introductionmentioning

confidence: 99%

The Study of the Reliability of Complex Components during the Electromigration Process

et al. 2023

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With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale. The simulation results indicated that the solder joint has obvious current crowding at the current inlet, which will significantly enhance the electromigration effect. Based on the atomic flux divergence method, the void formation of solder joints can be effectively predicted, and life prediction can be more accurate than Black’s equation. Experimental results indicated that the resistance of the daisy chain could be significantly increased with the process of void formation in the solder and corrosion of the leads. Moreover, the growth of intermetallic compounds can be obviously promoted under current stress. The main composition of the intermetallic compounds changes from almost entirely Cu5Sn6 to Cu5Sn6 and Cu3Sn; the cracks can be detected at the Cu3Sn layer. Specifically, the mean time to failure is 1065 h under 1.4 A current and 125 °C based on IPC-9701A guidelines.

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The Effect of Grain Orientation of β-Sn on Copper Pillar Solder Joints during Electromigration

Cited by 9 publications

References 26 publications

Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints

Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

The Study of the Reliability of Complex Components during the Electromigration Process

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