Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang, Ye Jin; Sharma, Ashutosh; Jung, Jae Pil

doi:10.3390/ma16247652

Cited by 2 publications

(1 citation statement)

References 310 publications

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“…The Through Silicon Via (TSV) technology utilizes the shortest vertical interconnections to establish electrical connections between chips, significantly enhancing the data transfer speed and packaging density between chips. It is a core technology in 3D packaging and provides a viable pathway for 3D integration [1][2][3][4][5][6]. In recent years, with the continuous increase in chip interconnect density, research on the reliability issues of TSV-metal lines has also deepened.…”

Section: Introductionmentioning

confidence: 99%

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Gong,

Xie,

Chen

et al. 2023

Crystals

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The combined use of Through Silicon Via (TSV) and metal lines, referred to as TSV-metal lines, is an essential structure in three-dimensional integrated circuits. In-depth research into the electromigration failure mechanism of TSV and the microstructure evolution can serve as theoretical guidance for optimizing three-dimensional stacking. This article conducted electromigration experiments on TSV-metal line structural samples at current densities of 1.0 × 105 A/cm2, 5 × 105 A/cm2, and 1 × 106 A/cm2. Additionally, Electron Back Scattered Diffraction (EBSD) technology was employed to systematically investigate the microstructural evolution of the TSV-metal line structure profiles before and after the application of electrical testing. The results indicate that the current induces a change in the crystal orientation at the TSV-metal interface (TSV/metal interface) and the bottom metal line. This phenomenon notably depends on the initial angle between the grain orientation and the current flow direction. When the angle between the current direction and the grain orientations [001] and [010] is relatively large, the crystals are more likely to deviate in the direction where the angle between the grain orientation and the current is smaller. This is because, at this point, the current direction is precisely perpendicular to the <100> crystal plane family, where the atomic density is lowest, and the energy required for electron transport is minimal. Therefore, the current readily rotates in the direction of this crystal orientation. Before the electromigration tests, areas with a high level of misorientation were primarily concentrated at the TSV/metal interface and the corners of the TSV-metal line. However, these areas were found to be more prone to developing voids after the tests. It is conjectured that the high misorientation level leads to elevated stress gradients, which are the primary cause of cracking failures in the TSV-metal line. As the current density increases from 5 × 105 A/cm2 to 1 × 106 A/cm2, the electromigration failure phenomena in the TSV become even more severe.

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Section: Introductionmentioning

confidence: 99%

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Gong,

Xie,

Chen

et al. 2023

Crystals

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Research Enhancing Acidic Mine Wastewater Purification: Innovations in Red Mud–Loess

Salih,

Xiao,

Dong

2024

Materials

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This study investigates the adsorption of cadmium (Cd) by red mud–loess mixed materials and assesses the influence of quartz sand content on permeability. Shear tests are conducted using various pore solutions to analyze shear strength parameters. The research validates solidification methods for cadmium-contaminated soils and utilizes SEM-EDS, FTIR, and XRD analysis to elucidate remediation mechanisms. The findings suggest that the quartz sand content crucially affects the permeability of fine-grained red mud–loess mixtures. The optimal proportion of quartz sand is over 80%, significantly enhancing permeability, reaching a coefficient of 6.7 × 10−4 cm/s. Insufficient quartz sand content of less than 80% fails to meet the barrier permeability standards, leading to a reduced service life of the engineered barrier. Adsorption tests were conducted using various pore solutions, including distilled water, acidic solutions, and solutions containing Cd, to evaluate the adsorption capacity and shear characteristics of the red mud–loess mixture. Additionally, the study examines the behavior of Cd-loaded red mud–loess mixtures in various pore solutions, revealing strain-hardening trends and alterations in cohesiveness and internal friction angle with increasing Cd concentrations. The analysis of cement–red mud–loess-solidified soil demonstrates enhancements in soil structure and strength over time, attributed to the formation of crystalline structures and mineral formations induced by the curing agent. These findings provide valuable insights into the remediation of cadmium-contaminated soils.

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Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Cited by 2 publications

References 310 publications

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Research Enhancing Acidic Mine Wastewater Purification: Innovations in Red Mud–Loess

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