Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process
Tao Gong,
Liangliang Xie,
Si Chen
et al.
Abstract:The combined use of Through Silicon Via (TSV) and metal lines, referred to as TSV-metal lines, is an essential structure in three-dimensional integrated circuits. In-depth research into the electromigration failure mechanism of TSV and the microstructure evolution can serve as theoretical guidance for optimizing three-dimensional stacking. This article conducted electromigration experiments on TSV-metal line structural samples at current densities of 1.0 × 105 A/cm2, 5 × 105 A/cm2, and 1 × 106 A/cm2. Additiona… Show more
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