The effect of dopant distribution and built-in electric field on the transit time of a transistor

Chowdhury, Nadim; Ghosh, F.; Biswas, Tanmay

doi:10.1016/0038-1101(80)90018-0

Solid-State Electronics

1980

DOI: 10.1016/0038-1101(80)90018-0

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The effect of dopant distribution and built-in electric field on the transit time of a transistor

Nadim Chowdhury

F. Ghosh

Tanmay Biswas

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1983

1985

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Cited by 3 publications

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Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon

Tyagi¹,

Sen²

1984

Phys. Stat. Sol. (a)

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The effect of grain size (D) and temperature (T) on the electrical behaviour of polysilicon is investigated theoretically by considering a simplified carrier trapping model and an empirical expression for grain boundary trapping states density. The model presented applies well for all grain sizes over the entire range of doping concentration and temperature. The computed variations of electrical properties, such as resistivity and mobility, with D and T are seen to be in agreement with the experimental findings. It is observed that the effect of temperature is more pronounced for smaller grain sizes whereas for larger values of D the properties tend to those of a single crystal.

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Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon

Tyagi¹,

Sen²

1984

Phys. Stat. Sol. (a)

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Mobility, lifetime and diffusion length in polycrystalline materials

Sen¹

1983

International Journal of Electronics

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Effective mobility of polycrystalline semiconductors

Tyagi¹,

Sen²

1985

International Journal of Electronics

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Theoretical investigations are presented to explain the behaviour of effective mobility (1'*) as a function of doping density, valid for all grain sizes, in polycrystalline silicon, by considering the dynamics of capture and release of free carriers at the grain boundary trapping sites, the finite thicknesses of the grain boundaries and the contributions of the bulk and depletion regions towards the electrical conductivity. An empirical formula is used for the value of grain boundary trapping states density (NT) as a function of grain size. Computations show that (a) 1'* has a minimum for a particular doping concentration for a given grain size D, and it shifts towards lower doping concentration with increasing D; and (b) the polycrystalline behaviour approaches the single-crystal behaviour for D ;" 3000 11m. The predicted results reasonably represent the experimentally observed variations of effective resistivity and effective mobility of polysemiconductors as a function of doping density for all grain sizes.

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The effect of dopant distribution and built-in electric field on the transit time of a transistor

Cited by 3 publications

References 8 publications

Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon

Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon

Mobility, lifetime and diffusion length in polycrystalline materials

Effective mobility of polycrystalline semiconductors

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